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Zhuoran Fang

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physics.app-ph physics.optics cond-mat.mtrl-sci

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preprint2022arXiv

Broadband nonvolatile electrically programmable silicon photonic switches

Programmable photonic integrated circuits (PICs) have recently gained significant interest due to their potential in creating next-generation technologies ranging from artificial neural networks and microwave photonics to quantum information processing. The fundamental building block of such programmable PICs is a tunable 2 x 2 switch, traditionally controlled by the thermo-optic or free-carrier dispersion. Yet, these implementations are power-hungry, volatile, and have a large footprint (typically > 100 um). Therefore, a truly 'set-and-forget' type 2 x 2 switch with zero static power consumption is highly desirable for large-scale PICs. Here, we report a broadband nonvolatile electrically programmable 2 x 2 silicon photonic switch based on the phase-change material Ge2Sb2Te5. The directional coupler switch exhibits a compact coupling length (64 um), small insertion loss (<2 dB), and minimal crosstalk (<-8 dB) across the entire telecommunication C-band while maintaining a record-high endurance of over 2,800 switching cycles. This demonstrated switch constitutes a critical component for realizing future generic programmable silicon photonic systems.

preprint2020arXiv

Black phosphorus van der Waals heterostructures light emitting diodes for mid-infrared silicon photonics

Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip. But the uptake of such approach is limited by the high costs and interfacial strains, associated with the process of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room temperature LEDs. The demonstrated devices can emit linearly polarized light, and their spectra cover the technologically important mid-IR atmospheric window (3-4 um). Additionally, the BP LEDs exhibit fast modulation speed as well as exceptional stability, and its peak extrinsic quantum efficiency (QE~0.9%) is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED. The reported hybrid platform holds great promise for mid-IR silicon photonics.

preprint2019arXiv

Nonvolatile electrically reconfigurable integrated photonic switch

Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in a large footprint and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong modulation in a static, self-holding fashion. Here, we demonstrate nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators that are intrinsically compact and energy-efficient. With phase transitions actuated by in-situ silicon PIN heaters, near-zero additional loss and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. Our work can potentially enable very large-scale general-purpose programmable integrated photonic processors.