Researcher profile

Zhun-Yong Ong

Zhun-Yong Ong contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2021arXiv

Complementary local-global approach for phonon mode connectivities

Sorting and assigning phonon branches (e.g., longitudinal acoustic) of phonon modes is important for characterizing the phonon bands of a crystal and the determination of phonon properties such as the Grüneisan parameter and group velocity. To do this, the phonon band indices (including the longitudinal and transverse acoustic) have to be assigned correctly to all phonon modes across a path or paths in the Brillouin zone. As our solution to this challenging problem, we propose a computationally efficient and robust two-stage hybrid method that combines two approaches with their own merits. The first is the perturbative approach in which we connect the modes using degenerate perturbation theory. In the second approach, we use numerical fitting based on least-squares fits to circumvent local connectivity errors at or near exact degenerate modes. The method can be easily generalized to other condensed matter problems involving Hermitian matrix operators such as electronic bands in tight-binding Hamiltonians or in a standard density-functional calculation, and photonic bands in photonic crystals.

preprint2021arXiv

Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface

Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal dichalcogenide (TMD) semiconductors. We model the phononic and electronic contributions to the thermal boundary conductance (TBC) variability for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2}$ interface. A phenomenological theory to model diffuse phonon transport at disordered interfaces is introduced and yields $G$=13.5 and 12.4 MW/K/m$^{2}$ at 300 K for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2} $ interface, respectively. We compare its predictions to those of the coherent phonon model and find that the former fits the MoS$_{2}$-SiO$_{2}$ data from experiments and simulations significantly better. Our analysis suggests that heat dissipation at the TMD-SiO$_{2}$ interface is dominated by phonons scattered diffusely by the rough interface although the electronic TBC contribution can be significant even at low electron densities ($n\leq10^{12}$ cm$^{-2}$) and may explain some of the variation in the experimental TBC data from the literature. The physical insights from our study can be useful for the development of thermally aware designs in TMD-based nanoelectronics.

preprint2020arXiv

Structure-specific, mode-resolved phonon coherence and specularity at graphene grain boundaries

In spite of their importance for understanding phonon transport phenomena in thin films and polycrystalline solids, the effects of boundary roughness scattering on phonon specularity and coherence are poorly understood because there is no general method for predicting their dependence on phonon momentum, frequency, branch and boundary morphology. Using the recently formulated atomistic S-matrix method, we develop a theory of boundary roughness scattering to determine the mode-resolved phonon coherence and specularity parameters from the scattering amplitudes. To illustrate the theory, we apply it to phonon scattering in realistic nonsymmetric graphene grain boundary (GB) models derived from atomic structure predictions. The method is validated by comparing its predictions with frequency-resolved results from lattice dynamics-based calculations. We prove that incoherent scattering is almost perfectly diffusive. We show that phonon scattering at the graphene GB is not diffuse although coherence and specularity are significantly reduced for long-wavelength flexural acoustic phonons. Our approach can be generalized to other atomistic boundary models.

preprint2019arXiv

Energy dissipation in van der Waals two-dimensional devices

Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphorus and semiconducting transition metal dichalcogenides. We discuss the processes through which non-equilibrium charge carriers, created either transiently through photoexcitation or at steady state by a large electric field, undergo energy relaxation with the lattice and the substrate We also discuss how these energy dissipation processes are affected by the device configuration (heterostructure, substrate material including hexagonal boron nitride, etc) as the use of different substrates, encapsulation, disorder, etc can introduce or remove scattering processes that change the energy relaxation pathways. Finally, we discuss how the unique carrier scattering dynamics in graphene-based vdW heterostructures can be exploited for optoelectronic applications in light emission and photodetection.

preprint2010arXiv

Frequency and Polarization Dependence of Thermal Coupling between Carbon Nanotubes and SiO2

We study heat dissipation from a (10,10) CNT to a SiO2 substrate using equilibrium and non-equilibrium classical molecular dynamics. The CNT-substrate thermal boundary conductance (TBC) is computed both from the relaxation time of the CNT-substrate temperature difference, and from the time autocorrelation function of the interfacial heat flux at equilibrium (Green-Kubo relation). The power spectrum of interfacial heat flux fluctuation and the time evolution of the internal CNT energy distribution suggest that: 1) thermal coupling is dominated by long wavelength phonons between 0-10 THz, 2) high frequency (40-57 THz) CNT phonon modes are strongly coupled to sub-40 THz CNT phonon modes, and 3) inelastic scattering between the CNT phonons and substrate phonons contributes to interfacial thermal transport. We also find that the low frequency longitudinal acoustic (LA) and twisting acoustic (TA) modes do not transfer energy to the substrate as efficiently as the low frequency transverse optical (TO) mode.

preprint2010arXiv

Imaging, simulation, and electrostatic control of power dissipation in graphene devices

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs. bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provides a non-invasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

preprint2010arXiv

Molecular Dynamics Simulation of Thermal Boundary Conductance Between Carbon Nanotubes and SiO2

We investigate thermal energy coupling between carbon nanotubes (CNTs) and SiO2 with non-equilibrium molecular dynamics simulations. The thermal boundary conductance (g) per unit CNT length is found to scale proportionally with the strength of the Van der Waals interaction (~X), with CNT diameter (~D), and as a weak power law of temperature (~T^1/3 between 200-600 K). The thermal relaxation time of a single CNT on SiO2 is independent of diameter, tau ~ 85 ps. With the standard set of parameters g ~ 0.1 W/m/K for a 1.7 nm diameter CNT at room temperature. Our results are comparable to, and explain the range of experimental values for CNT-SiO2 thermal coupling from variations in diameter, temperature, or details of the surface interaction strength.

preprint2010arXiv

Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices

We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal "footprint" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular dynamics (MD) simulations. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally to CNT diameter and inversely with SiO2 surface roughness (~d/Δ). Comparison of diffuse mismatch modeling (DMM) and data reveals the upper limit of thermal coupling ~0.4 W/K/m per unit length at room temperature, and ~0.7 W/K/m at 600 C for the largest diameter (3-4 nm) CNTs. We also find semiconducting CNTs can break down prematurely, and display more breakdown variability due to dynamic shifts in threshold voltage, which metallic CNTs are immune to; this poses a fundamental challenge for selective electrical breakdowns in CNT electronics.