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Zhongxu Wei

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cond-mat.supr-con cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Emergence of superconducting dome in insulating ZrNx films via nitrogen manipulation

Reproducing the electronic phase diagram of strongly correlated high-transition-temperature (high-Tc) superconductors in materials other than Cu-, Fe-, and Ni-based compounds has been a challenging task. Only very recently, a few material systems have partially achieved this goal by band engineering. In this work, we combine film growth, charge transport, magnetometry, Terahertz Spectroscopy, Raman scattering, and Scanning Transmission Electron Microscopy to investigate superconductivity and the normal state of ZrNx, which reveals a phase diagram that bears extraordinary similarities to those of high-Tc superconductors. Remarkably, even though superconductivity of ZrNx can be characterized within the Bardeen-Cooper-Schrieffer paradigm and its normal state can be understood within the Fermi liquid framework, by tunning the N chemical concentration, we observe the evolution of a superconducting dome in the close vicinity of a strongly insulating state and a normal state resistivity mimics its counterpart of the high-Tc superconductors.

preprint2022arXiv

Identifying $s$-wave pairing symmetry in single-layer FeSe from topologically trivial edge states

Determining the pairing symmetry of single-layer FeSe on SrTiO$_3$ is the key to understanding the enhanced pairing mechanism; furthermore, it guides exploring new superconductors with high transition temperatures ($T_\mathrm{c}$). Despite significant efforts, it remains controversial whether the symmetry is the sign-preserving $s$- or the sign-changed $s_{\pm}$-wave. Here, we investigate the pairing symmetry of single-layer FeSe from a topological point of view. Using low-temperature scanning tunneling microscopy/spectroscopy, we have systematically characterized the superconducting states at isolated edges and corners of single-layer FeSe. The tunneling spectra collected at edges and corners exhibit full gap and substantial dip, respectively, demonstrating the absence of topologically non-trivial edge/corner modes. According to the theoretical calculation, these spectroscopic features are strong evidence for the sign-preserving $s$-wave pairing.

preprint2020arXiv

Combinatorial Laser Molecular Beam Epitaxy System Integrated with Specialized Low-temperature Scanning Tunneling Microscopy

We present a newly developed facility, comprised of a combinatorial laser molecular beam epitaxy system and an in-situ scanning tunneling microscopy (STM). This facility aims at accelerating the materials research in a highly efficient way, by advanced high-throughput film synthesis techniques and subsequent fast characterization of surface morphology and electronic states. Compared with uniform films deposited by conventional methods, the so-called combinatorial thin films will be beneficial to determining the accurate phase diagrams of different materials due to the improved control of parameters such as chemical substitution and sample thickness resulting from a rotarymask method. A specially designed STM working under low-temperature and ultra-high vacuum conditions is optimized for the characterization of combinatorial thin films, in an XY coarse motion range of 15 mm $\times$ 15 mm and with sub-micrometer location precision. The overall configuration as well as some key aspects like sample holder design, scanner head, and sample/tip/target transfer mechanism are described in detail. The performance of the device is demonstrated by synthesizing high-quality superconducting FeSe thin films with gradient thickness, imaging surfaces of highly oriented pyrolytic graphite, Au (111), Bi2Sr2CaCu2O8+δ (BSCCO) and FeSe. In addition, we have also obtained clean noise spectra of tunneling junctions and the superconducting energy gap of BSCCO. The successful manufacturing of such a facility opens a new window for the next generation of equipment designed for experimental materials research.