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Zhongming Wei

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ResearcherUnclaimed source record
cond-mat.mtrl-sci

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3 publications

preprint2022arXiv

Exchange bias in van der Waals MnBi2_2Te4_4/Cr2_2Ge2_2Te6_6 heterostructure

The layered van der Waals (vdW) material MnBi2_2Te4_4 is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE) and axion states. However, both the zero-field and high-temperature QAHE are not easy to realize. It is theoretically proposed that the exchange bias can be introduced in the MnBi2Te4/ferromagnetic (FM) insulator heterostructures and thus opens the surface states gap, making it easier to realize the zero-field or high-temperature QAHE. Here we report the electrically tunable exchange bias in the van der Waals MnBi2_2Te4_4/Cr2_2Ge2_2Te6_6 heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the magnetic band gap. Moreover, the exchange bias was experienced by the antiferromagnetic (AFM) MnBi2_2Te4_4 layer rather than the FM layer. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible high-temperature QAHE.

Open access
preprint2021arXiv

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s-d coupling induced giant phonon anharmonicity is the fundamental mechanism responsible for the ultralow thermal conductivity of copper compounds. The symmetry controlled strong coupling of high-lying occupied copper 3d orbital with the unoccupied 4s state under thermal vibration remarkably lowers the lattice potential barrier, which enhances anharmonic scattering between phonons. This understanding is confirmed by temperature-dependent Raman spectra measurements. Our study offers an insight at atomic level connecting electronic structures with phonon vibration modes, and thus sheds light on materials properties that rely on electron-phonon coupling, such as thermoelectricity and superconductivity.

Open access
preprint2018arXiv

Two-dimensional InSe/WS2_2 heterostructure with enhanced optoelectronic performance in the visible region

Two-dimensional (2D) InSe and WS2_2 exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible light due to wide band gaps. 2D InSe has high electron mobility but low hole mobility, while 2D WS2_2 is on the opposite. Here, we design a 2D heterostructure composed of their monolayers and study its optoelectronic properties by first-principles calculations. Our results show that the heterostructure has a direct band gap of 2.19 eV, which is much smaller than those of the monolayers mainly due to a type-II band alignment: the valence band maximum and the conduction band minimum of monolayer InSe are lower than those of monolayer WS2_2, respectively. The visible-light absorption is enhanced considerably, e.g. about fivefold (threefold) increase at the wavelength of 490 nm in comparison to monolayer InSe (WS2_2). The type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs, i.e., electrons (holes) reside preferably in the InSe (WS2_2) layer. The two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS2_2 monolayers, respectively.

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