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Researcher profile

Zhiyong Zhu

Zhiyong Zhu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2013arXiv

Peculiarities of Spin Polarization Inversion at a Thiophene/Cobalt Interface

We perform ab-initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule: The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Role of electronic correlations in Ga

An extended around mean field (AMF) functional for less localized $p$ electrons is developed to quantify the influence of electronic correlations in $α$-Ga. Both the local density approximation (LDA) and generalized gradient approximation (GGA) are known to mispredict the Ga positional parameters. The extended AMF functional together with an onsite Coulomb interaction of $U_{\rm eff}=1.1$ eV, as obtained from constraint LDA calculations, reduces the deviations by about 20%. The symmetry lowering coming along with the electronic correlations turns out to be in line with the Ga phase diagram.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Designer switches: Effect of crystal planes on time-dependent electron transport through an interacting quantum dot

The time-dependent non-crossing approximation is utilized to determine the effects of the crystal planes of gold contacts on time dependent current through a quantum dot suddenly shifted into the Kondo regime via a gate voltage. For an asymmetrically coupled system, instantaneous conductance exhibits complex fluctuations. We identify the frequencies participating in these fluctuations and they turn out to be proportional to the separation between the sharp features in the density of states and the Fermi level in agreement with previous studies. Based on this observation, we predict that using different crystal planes as electrodes would give rise to drastically different transient currents which can be accessed with ultrafast pump-probe techniques.

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preprint2010arXiv

Prediction of femtosecond oscillations in the transient current of a quantum dot in the Kondo regime

We invoke the time-dependent non-crossing approximation in order to study the effects of the density of states of gold contacts on the instantaneous conductance of a single electron transistor which is abruply moved into the Kondo regime by means of a gate voltage. For an asymmetrically coupled system, we observe that the instantaneous conductance in the Kondo timescale exhibits beating with distinct frequencies, which are proportional to the separation between the Fermi level and the sharp features in the density of states of gold. Increasing the ambient temperature or bias quenches the amplitude of the oscillations. We attribute the oscillations to interference between the emerging Kondo resonance and van-Hove singularities in the density of state. In addition, we propose an experimental realization of this model.

0 citations0 reviewsNo code linkedOpen access