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Zhifeng Zhu

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2025arXiv

Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose by Néel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

preprint2024arXiv

Spin-Transfer-Torque Induced Spatially Nonuniform Switching in Ferrimagnets

Ferrimagnet (FiM), (FeCo)1-xGdx, attracts research attention due to its ultrafast magnetic dynamics and finite net magnetization. Incorporating FiM into the magnetic tunnel junction will be beneficial to further improve the writing speed of magnetic random access memory (MRAM). It is commonly assumed that the FeCo and Gd atoms are switched together due to the strong exchange coupling, which remains valid even if one performs the two-sublattice macrospin simulation. Interestingly, using the atomistic model developed by our group, it is clearly seen that different atoms are not switched together. In addition, our study reveals that the nature of switching is spatially nonuniform even in the small sample with the dimension of 20 nm-20 nm. Furthermore, the characteristics of nonuniformity are completely different for samples with different Gd composition (x). When x is close to the magnetization compensation point, successful switching cannot be obtained, but is accompanied by the stable oscillation. The atom type that dominates the oscillation is different from that predicted by the two-sublattice macrospin model. In addition, the size of singular region is a non-monotonic function of current density. All these results can only be understood by considering the spatial nonuniform magnetization dynamics.

preprint2020arXiv

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.