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Researcher profile

Zhibin Lin

Zhibin Lin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2011arXiv

Efficient Exciton Transport in Strongly Quantum-Confined Silicon Quantum Dots

First-order perturbation theory and many-body Green function analysis are used to quantify the influence of size, surface reconstruction and surface treatment on exciton transport between small silicon quantum dots. Competing radiative processes are also considered in order to determine how exciton transport efficiency is influenced. The analysis shows that quantum confinement causes small (~1 nm) Si quantum dots to exhibit exciton transport efficiencies far exceeding that of their larger counterparts. We also find that surface reconstruction significantly influences the absorption cross section and leads to a large reduction in both transport rate and efficiency. Exciton transport efficiency is higher for hydrogen passivated dots as compared with those terminated with more electronegative ligands. This is because such ligands delocalize electron wave functions towards the surface and result in a lower dipole moment. Such behavior is not predicted by Förster theory, built on a dipole-dipole approximation, because higher order multi-poles play a significant role in the exciton dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Two-Dimensional Carbon Semiconductor

We show that patterned defects can be used to disrupt the sub-lattice symmetry of graphene so as to open up a band gap. This way of modifying graphene's electronic structure does not rely on external agencies, the addition of new elements or special boundaries. The method is used to predict a planar, low energy, graphene allotrope with a band gap of 1.2 eV. This defect engineering also allows semiconducting ribbons of carbon to be fabricated within graphene. Linear arrangements of defects lead to naturally embedded ribbons of the semiconducting material in graphene, offering the prospect of two-dimensional circuit logic composed entirely of carbon.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Maximum relative excitation of a specific vibrational mode via optimum laser pulse duration

For molecules and materials responding to femtosecond-scale optical laser pulses, we predict maximum relative excitation of a Raman-active vibrational mode with period T when the pulse has an FWHM duration of 0.42 T. This result follows from a general analytical model, and is precisely confirmed by detailed density-functional-based dynamical simulations for C60 and a carbon nanotube, which include anharmonicity, nonlinearity, no assumptions about the polarizability tensor, and no averaging over rapid oscillations within the pulse. The mode specificity is, of course, best at low temperature and for pulses that are electronically off-resonance, and the energy deposited in any mode is proportional to the fourth power of the electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Size Dependence of the Multiple Exciton Generation Rate in CdSe Quantum Dots

The multiplication rates of hot carriers in CdSe quantum dots are quantified using an atomistic pseudopotential approach and first order perturbation theory. Both excited holes and electrons are considered, and electron-hole Coulomb interactions are accounted for. We find that holes have much higher multiplication rates than electrons with the same excess energy due to the larger density of final states (positive trions). When electron-hole pairs are generated by photon absorption, however, the net carrier multiplication rate is dominated by photogenerated electrons, because they have on average much higher excess energy. We also find, contrary to earlier studies, that the effective Coulomb coupling governing carrier multiplication is energy dependent. We show that smaller dots result in a decrease in the carrier multiplication rate for a given absolute photon energy. However, if the photon energy is scaled by the volume dependent optical gap, then smaller dots exhibit an enhancement in carrier multiplication for a given relative energy.

0 citations0 reviewsNo code linkedOpen access