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Zhi-Xin Guo

Zhi-Xin Guo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

11 published item(s)

preprint2024arXiv

Origin of zigzag antiferromagnetic orders in XPS3 (X= Fe, Ni) monolayers

Recently, two monolayer magnetic materials, i.e., FePS3 and NiPS3, have been successfully fabricated. Despite that they have the same atomic structure, the two monolayers exhibit distinct magnetic properties. FePS3 holds an out-of-plane zigzag antiferromagnetic (AFM-ZZ) structure, while NiPS3 exhibits an in-plane AFM-ZZ structure. However, there is no theoretical model which can properly describe its magnetic ground state due to the lack of a full understanding of its magnetic interactions. Here, by combining the first-principles calculations and the newly developed machine learning method, we construct an exact spin Hamiltonian of the two magnetic materials. Different from the previous studies which failed to fully consider the spin-orbit coupling effect, we find that the AFM-ZZ ground state in FePS3 is stabilized by competing ferromagnetic nearest-neighbor and antiferromagnetic third nearest-neighbor exchange interactions, and combining single-ion anisotropy. Whereas, the often ignored nearest-neighbor biquadratic exchange is responsible for the in-plane AFM-ZZ ground state in NiPS3. We additionally calculate spin-wave spectrum of AFM-ZZ structure in the two monolayers based on the exact spin Hamiltonian, which can be directly verified by the experimental investigation. Our work provides a theoretical framework for the origin of AFM-ZZ ground state in two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intriguing Magnetoelectric Effect in Two-dimensional Ferromagnetic/Perovskite Oxide Ferroelectric Heterostructure

Two-dimensional (2D) magnets have broad application prospects in the spintronics, but how to effectively control them with a small electric field is still an issue. Here we propose that 2D magnets can be efficiently controlled in a multiferroic heterostructure composed of 2D magnetic material and perovskite oxide ferroelectric (POF) whose dielectric polarization is easily flipped under a small electric field. We illustrate the feasibility of such strategy in the bilayer CrI3/BiFeO3(001) heterostructure by using the first-principles calculations. Different from the traditional POF multiferroic heterostructures which have strong interface interactions, we find that the interface interaction between CrI3 and BiFeO3(001) is van der Waals type. Whereas, the heterostructure has particular strong magnetoelectric coupling where the bilayer CrI3 can be efficiently switched between ferromagnetic and antiferromagnetic types by the polarized states of BiFeO3(001). We also discover the competing effect between electron doping and the additional electric field on the interlayer exchange coupling interaction of CrI3, which is responsible to the magnetic phase transition. Our results provide a new avenue for the tuning of 2D magnets with a small electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intrinsic anomalous spin Hall effect

Charge-spin interconversion in magnetic materials is investigated by using first-principles calculations. In addition to the conventional spin Hall effect (SHE) that requires mutual orthogonality of the charge current, spin-flow direction, and spin polarization, the recently proposed anomalous SHE (ASHE) is confirmed in Mn2Au and WTe2. The interaction of the order parameter with conduction electrons leads to sizeable nonzero spin Berry curvatures that give rise to nonzero anomalous spin Hall conductivity (ASHC). Our calculations show that the ASHE is intrinsic and originates from the order-parameter-controlled spin-orbit interaction, which generates an extra anomalous effective field. A useful relationship among the order parameter, spin Berry curvature and ASHC is revealed. Our findings open a new avenue for arbitrary-type spin current generation and detection.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum Anomalous Hall and Valley Quantum Anomalous Hall Effects in Two-Dimensional d0 Orbital XY Monolayers

We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting. Moreover, the topological properties of XY monolayers can be effciently tuned by the in-plane strain, owing to the strain-induced band inversion between the px;y and pz orbitals. Our findings suggest that the d0 orbital XY monolayers can be good candidates for promising applications in the spintronics and multifunctional topological-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Crossover between Silicene and Ultra-Thin Si Atomic Layers on Ag(111) Surfaces

We report on total-energy electronic structure calculations in the density-functional theory performed for the ultra-thin atomic layers of Si on Ag(111) surfaces. We find several distinct stable silicene structures: $\sqrt{3}\times\sqrt{3}$, $3\times3$, $\sqrt{7}\times\sqrt{7}$ with the thickness of Si increasing from monolayer to quad-layer. The structural bistability and tristability of the multilayer silicene structures on Ag surfaces are obtained, where the calculated transition barriers infer the occurrence of the flip-flop motion at low temperature. The calculated STM images agree well with the experimental observations. We also find the stable existence of $2\times1$ $π$-bonded chain and $7\times7$ dimer-adatom-stacking fault Si(111)-surface structures on Ag(111), which clearly shows the crossover of silicene-silicon structures for the multilayer Si on Ag surfaces. We further find the absence of the Dirac states for multilayer silicene on Ag(111) due to the covalent interactions of silicene-Ag interface and Si-Si interlayer. Instead, we find a new state near Fermi level composed of $π$ orbitals locating on the surface layer of $\sqrt{3}\times\sqrt{3}$ multilayer silicene, which satisfies the hexagonal symmetry and exhibits the linear energy dispersion. By examining the electronic properties of $2\times1$ $π$-bonded chain structures, we find that the surface-related $π$ states of multilayer Si structures are robust on Ag surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

New approach for fabrication germanene with Dirac electrons preserved: A first principle study

How to obtain germanene with Dirac electrons preserved is still an open challenge. Here we report a sandwich-dehydrogenation approach, i.e., to fabricate germanene through dehydrogenating germanane in a sandwiched structure. The dehydrogenation can spontaneously occur for the sandwiched structure, which overcomes the problem of amorphization in the heating dehydrogenation approach. The obtained germanene preserve the Dirac electronic properties very well. Moreover, the Fermi velocity of germanene can be efficiently manipulated through controlling the interlayer spacing between germanane and the sandwiching surfaces. Our results indicate a guideline for fabrication of prefect two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Structural Evolution and Optoelectronic Applications of Multilayer Silicene

Despite the recent progress on two-dimensional multilayer materials (2DMM) with weak interlayer interactions, the investigation on 2DMM with strong interlayer interactions is far from its sufficiency. Here we report on first-principles calculations that clarify the structural evolution and optoelectronic properties of such a 2DMM, multilayer silicene. With our newly developed global optimization algorithm, we discover the existence of rich dynamically stable multilayer silicene phases, the stability of which is closely related to the extent of sp3 hybridization that can be evaluated by the average bonds and effective bond angles. The stable Si(111) surface structures are obtained when the silicene thickness gets up to four, showing the critical thickness for the structural evolution. We also find that the multilayer silicene with pi-bonded surfaces present outstanding optoelectronic properties for the solar cells and optical fiber communications due to the incorporation of sp2-type bonds in the sp3-type bonds dominated system. This study is helpful to complete the picture of structure and related property evolution of 2DMM with strong interlayer interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structural Tristability and Deep Dirac States in Bilayer Silicene on Ag(111) Surfaces

We report on total-energy electronic-structure calculations in the density-functional theory performed for both monolayer and bilayer silicene on Ag(111) surfaces. The rt3 x rt3 structure observed experimentally and argued to be the monolayer silicene in the past [Chen et al., Phys. Rev. Lett. 110, 085504 (2013)] is identified as the bilayer silicene on the Ag(111) surface. The identification is based on our accurate density-functional calculations in which three approximations, the local density approximation, the generalized-gradient approximation, and the van-der-Waals-density-functional approximation, to the exchange-correlation energy have been carefully examined. We find that the structural tristability exists for the rt3 x rt3 bilayer silicene. The calculated energy barriers among the three stable structures are in the range of 7 - 9 meV per Si atom, indicating possible flip-flop motions among the three. We have found that the flip-flop motion between the two of the three structures produces the honeycomb structure in the STM images, whereas the motion among the three does the 1 x 1 structure. We have found that the electron states which effectively follow Dirac equation in the freestanding silicene couple with the substrate Ag orbitals due to the bond formation, and shift downwards deep in the valence bands. This feature is common to all the stable or metastable silicene layer on the Ag(111) substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Absence of Dirac Electrons in Silicene on Ag (111) Surfaces

We report first-principles calculations that clarify stability and electronic structures of silicene on Ag(111) surfaces. We find that several stable structures exist for silicene/Ag(111), exhibiting a variety of images of scanning tunneling microscopy. We also find that Dirac electrons are {\em absent} near Fermi energy in all the stable structures due to buckling of the Si monolayer and mixing between Si and Ag orbitals. We instead propose that either BN substrate or hydrogen processing of Si surface is a good candidate to preserve Dirac electrons in silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal conductivity of epitaxial graphene nanoribbons on SiC: effect of substrate

We study the effect of SiC substrate on thermal conductivity of epitaxial graphene nanoribbons (GNRs) using the nonequilibrium molecular dynamics method. We show that the substrate has strong interaction with single-layer GNRs during the thermal transport, which largely reduces the thermal conductivity. The thermal conductivity characteristics of suspended GNRs are well preserved in the second GNR layers of bilayer GNR, which has a weak van der Waals interaction with the underlying structures. The out-of-plane phonon mode is found to play a critical role on the thermal conductivity variation of the second GNR layer induced by the underlying structures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Layer and size dependence of thermal conductivity in multilayer graphene nanoribbons

Using non-equilibrium molecular dynamics method(NEMD), we have found that the thermal conductivity of multilayer graphene nanoribbons monotonously decreases with the increase of the number of layers, such behavior can be attributed to the phonon resonance effect of out-of-plane phonon modes. The reduction of thermal conductivity is found to be proportional to the layer size, which is caused by the increase of phonon resonance. Our results are in agreement with recent experiment on dimensional evolution of thermal conductivity in few layer graphene.

0 citations0 reviewsNo code linkedOpen access