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Zhi-Hao He

Zhi-Hao He contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Disorder and magnetic field induced Bose-metal state in two-dimensional Ta$_x$(SiO$_2$)$_{1-x}$ granular films

The origin of the intermediate anomalous metallic state in two-dimensional superconductor materials remains enigmatic. In the present paper, we observe such a state in a series of $\sim$9.0 nm thick Ta$_x$(SiO$_2$)$_{1-x}$ ($x$ being the volume fraction of Ta) nanogranular films. At zero field, the $x$ $\gtrsim$ 0.75 films undergo a Berezinskii-Kosterlitz-Thouless transition as transform from normal to superconducing states upon cooling. For the $x$ $\lesssim$ 0.71 films, the resistance increases with decreasing temperature from 2 K down to 40 mK. A normal state to anomalous metallic state transition is observed in the $x$ $\simeq$ 0.73 film, i.e., near the transition temperature, the resistance of the film decreases sharply upon cooling as if the system would cross over to superconducting state, but then saturates to a value far less than that in normal state. When a small magnetic field perpendicular to the film plane is applied, the anomalous metallic state occurs in the $x$ $\gtrsim$ 0.75 films. It is found that both disorder and magnetic field can induce the transition from superconductor to anomalous metal and their influences on the transition are similar. For the the magnetic field induced case, we find the sheet resistance $R_{\square}(T,H)$ ($T$ and $H$ being the temperature and the magnitude of magnetic field) data near the crossover from the anomalous metal to superconductor and in the vicinity of the anomalous metal to insulator transition, respectively, obey unique scaling laws deduced from the Bose-metal model. Our results strongly suggest that the anomalous metallic state in the Ta$_x$(SiO$_2$)$_{1-x}$ granular films is bosonic and dynamical gauge field fluctuation resulting from superconducting quantum fluctuations plays a key role in its formation.

preprint2019arXiv

Universal Hall coefficient correction in strongly coupled Cr-SiO$_2$ nanogranular metals

The microstructure and electrical transport of Cr$_x$(SiO$_2$)$_{1-x}$ nanogranular films with Cr volume faction $x$$\simeq$0.67 and 0.72 are systematically investigated. The transmission electron microscopy images and elemental mappings indicate that the films are quite inhomogeneous: some Cr granules directly connect to others while some Cr granules with size $\sim$1 to $\sim$3\,nm disperse in the SiO$_2$ dielectric matrix. For each film, the Hall coefficient $R_H$ varies linearly with the natural logarithm of temperature, i.e., $ΔR_H$$\propto$$\ln T$, above $\sim$60\,K, saturates at $\sim$60\,K, and retains the saturating value below $\sim$60\,K. The temperature dependence of Hall coefficient can be explained by the recent theory in granular metals and originates from \emph{virtual diffusion} of electrons through the metallic granules. For the conductivity $σ$, a robust $Δσ$$\propto$$\sqrt{T}$ law is observed from $\sim$50 down to 2\,K. The behavior of the conductivity stems from the ``Altshuler-Aronov" correction, whose influence on the Hall coefficient is not present in the films.