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Zhenyu Pan

Zhenyu Pan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2026arXiv

Attention Sinks and Outliers in Attention Residuals

We propose OASIS, an outlier- and sink-aware technique built on inter-layer null signaling. As AttnResidual architectures introduce an additional depth-wise normalization channel, they improve inter-layer routing flexibility but also exacerbate attention sinks, activation outliers, and the resulting degradation in inference stability and quantization robustness. OASIS addresses this issue by introducing a Softmax1-based null space and coupling token-level null evidence to depth routing through an inter-layer null signal, thereby reducing sink-dominated routing and improving structural robustness. Theoretically, we show that the dual-normalization design of AttnResidual intensifies sink formation and quantization brittleness. Experimentally, we compare OASIS against five baselines on three real-world datasets and observe consistent improvements in both attention sink and post-quantization performance. Notably, OASIS achieves an average reduction of 9.26% in maximum infinity norm and 2.60% in average kurtosis across the evaluated settings, while lowering perplexity by 75.85% under W8A8 and improving GSM8K Pass@1 by 12.42% under W4A4.

preprint2019arXiv

Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique

Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile, certain semiconductors are highly intrinsic and resistive, many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that have gained extensive attention recently are a good example. Few credible studies exist on the Seebeck coefficient of, CH3NH3PbI3, for example. We report here an AC technique based Seebeck coefficient measurement, which makes high quality voltage measurement on samples with resistances up to 100Gohm. This is achieved through a specifically designed setup to enhance sample isolation and reduce meter loading. As a demonstration, we performed Seebeck coefficient measurement of a CH3NH3PbI3 thin film at dark and found S = +550 microV/K. Such property of this material has not been successfully studied before.