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Zhenpeng Hu

Zhenpeng Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

4 published item(s)

preprint2021arXiv

Complex Spin Hamiltonian Represented by Artificial Neural Network

The effective spin Hamiltonian method is widely adopted to simulate and understand the behavior of magnetism. However, the magnetic interactions of some systems, such as itinerant magnets, are too complex to be described by any explicit function, which prevents an accurate description of magnetism in such systems. Here, we put forward a machine learning (ML) approach, applying an artificial neural network (ANN) and a local spin descriptor to develop effective spin potentials for any form of interaction. The constructed Hamiltonians include an explicit Heisenberg part and an implicit non-linear ANN part. Such a method successfully reproduces artificially constructed models and also sufficiently describe the itinerant magnetism of bulk Fe3GeTe2. Our work paves a new way for investigating complex magnetic phenomena (e.g., skyrmions) of magnetic materials.

preprint2020arXiv

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180 degrees spin switching between states. We demonstrate a novel eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3)N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial <001> direction (N = 1 and 2) to eightfold <111> directions (N = 3, 4 and 5). This eightfold anisotropy enables 71 and 109 degrees spin switching in SrRuO3 monolayers, analogous to 71 and 109 degrees polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multi-state device applications.

preprint2020arXiv

Experimental Realization of Two-Dimensional Buckled Lieb lattice

Two-dimensional (2D) materials with a Lieb lattice can host exotic electronic band structures. Such a system does not exist in nature, and it is also difficult to obtain in the laboratory due to its structural instability. Here, we experimentally realized a 2D system composed of a tin overlayer on an aluminum substrate by molecular beam epitaxy. The specific arrangement of Sn atoms on the Al(100) surface, which benefits from favorable interface interactions, forms a stabilized buckled Lieb lattice. Our theoretical calculations indicate a partially broken nodal line loop protected by its mirror reflection symmetry and a topologically nontrivial insulating state with a spin-orbital coupling (SOC) effect in the band structure of this Lieb lattice. The electronic structure of this system has also been experimentally characterized by scanning tunnelling spectroscopy and angle-resolved photoemmision spectroscopy. Our work provides an appealing method for constructing 2D quantum materials based on the Lieb lattice.

preprint2016arXiv

Energy calculations of charged point defects on surfaces

We present a virtual ionic crystal (VIC) method to calculate energies of charged point defects on surfaces. No artificial charge but an actual zero-dimensional (0D) species is introduced to charge a defect. Effect of dielectric substrate on lattice energy is depressed through suitable configuration of the unit cell. The lattice energy approximates to Madelung energy with defect and 0D species considered as point charges in vacuum. Energy required to charge the defect is derived from charge quantity on the defect in VIC, energy of unit cell, and energy required to charge the 0D species.