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Researcher profile

Zhengyang Cai

Zhengyang Cai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.app-phquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Observing frustrated quantum magnetism in two-dimensional ion crystals

Two-dimensional (2D) quantum magnetism is a paradigm in strongly correlated many-body physics. The understanding of 2D quantum magnetism can be expedited by employing a controllable quantum simulator that faithfully maps 2D-spin Hamiltonians. The 2D quantum simulators can exhibit exotic phenomena such as frustrated quantum magnetism and topological order and can be used to show quantum computational advantages. Many experimental platforms are being developed, including Rydberg atoms and superconducting annealers. However, with trapped-ion systems, which showed the most advanced controllability and quantum coherence, quantum magnetism was explored in one-dimensional chains. Here, we report simulations of frustrated quantum magnetism with 2D ion crystals. We create a variety of spin-spin interactions for quantum magnets, including those that exhibit frustration by driving different vibrational modes and adiabatically prepare the corresponding ground states. The experimentally measured ground states are consistent with the theoretical predictions and are highly degenerate for geometrically frustrated spin models in two dimensions. Quantum coherence of the ground states is probed by reversing the time evolution of the B-field to the initial value and then measuring the extent to which the remaining state coincides with the initial state. Our results open the door for quantum simulations with 2D ion crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution

Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these materials have led to fabrication of heterostructures, superlattices, and twisted structures with breakthrough discoveries and applications. Here, we report a novel atomic-scale material design tool that selectively breaks and forms chemical bonds of 2D materials at room temperature, called atomic-layer substitution (ALS), through which we can substitute the top layer chalcogen atoms within the 3-atom-thick transition-metal dichalcogenides using arbitrary patterns. Flipping the layer via transfer allows us to perform the same procedure on the other side, yielding programmable in-plane multi-heterostructures with different out-of-plane crystal symmetry and electric polarization. First-principle calculations elucidate how the ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. Optical characterizations confirm the fidelity of this design approach, while TEM shows the direct evidence of Janus structure and suggests the atomic transition at the interface of designed heterostructure. Finally, transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y corresponding to the bottom and top layers) lateral multi-heterostructures reveal the surface potential and dipole orientation of each region, and the barrier height between them. Our approach for designing artificial 2D landscape down to a single layer of atoms can lead to unique electronic, photonic and mechanical properties previously not found in nature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unsaturated Single Atoms on Monolayer Transition Metal Dichalcogenides for Ultrafast Hydrogen Evolution

Large scale implementation of electrochemical water splitting for hydrogen evolution requires cheap and efficient catalysts to replace expensive platinum. Molybdenum disulfide is one of the most promising alternative catalysts but its intrinsic activity is still inferior to platinum. There is therefore a need to explore new active site origins in molybdenum disulfide with ultrafast reaction kinetics and to understand their mechanisms. Here, we report a universal cold hydrogen plasma reduction method for synthesizing different single atoms sitting on two-dimensional monolayers. In case of molybdenum disulfide, we design and identify a new type of active site, i.e., unsaturated Mo single atoms on cogenetic monolayer molybdenum disulfide. The catalyst shows exceptional intrinsic activity with a Tafel slope of 35.1 mV dec-1 and a turnover frequency of ~10^3 s-1 at 100 mV, based on single flake microcell measurements. Theoretical studies indicate that coordinately unsaturated Mo single atoms sitting on molybdenum disulfide increase the bond strength between adsorbed hydrogen atoms and the substrates through hybridization, leading to fast hydrogen adsorption/desorption kinetics and superior hydrogen evolution activity. This work shines fresh light on preparing highly-efficient electrocatalysts for water splitting and other electrochemical processes, as well as provides a general method to synthesize single atoms on two-dimensional monolayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vertical CVD Growth of Highly Uniform Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially non-uniform growth dynamics, it is challenging to grow wafer-scale 2D TMDCs with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design to grow monolayer TMDCs with a uniform density and high quality over the whole wafer, and with excellent reproducibility. The use of such VCVD design can easily control the three key growth parameters of precursor concentration, gas flow and temperature, which cannot be done in currently widely-used horizontal CVD system. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by the one-step transfer of VCVD-grown TMDC samples, owning to its good uniformity. This work opens a way to grow 2D materials with high uniformity and reproducibility on the wafer scale, which can be used for the scalable fabrication of 2D materials and their heterostructures.

0 citations0 reviewsNo code linkedOpen access