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Researcher profile

Zhengcai Xia

Zhengcai Xia contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

3 published item(s)

preprint2020arXiv

A comparative study on magnetic order and field induced magnetic transition on two series of double perovskite iridates RE2BIrO6 (RE=Pr,Nd,Sm,Eu,Gd B=Zn,Mg)

We perform a comparative magnetic study on two series of rare-earth (RE) based double perovskite iridates RE2BIrO6 (RE=Pr,Nd,Sm-Gd;B=Zn,Mg), which show Mott insulating state with tunable charge energy gap from ~330 meV to ~560 meV by changing RE cations. For nonmagnetic RE=Eu cations, Eu2MgIrO6 shows antiferromagnetic (AFM) order and field-induced spin-flop transitions below Néel temperature (TN) in comparison with the ferromagnetic (FM)-like behaviors of Eu2ZnIrO6 at low temperatures. For magnetic-moment-containing RE ions, Gd2BIrO6 show contrasting magnetic behaviors with FM-like transition (B=Zn) and AFM order (B=Mg), respectively. While, for RE=Pr, Nd and Sm ions, all members show AFM ground state and field-induced spin-flop transitions below TN irrespective of B=Zn or Mg cations. Moreover, two successive field-induced metamagnetic transitions are observed for RE2ZnIrO6 (RE=Pr,Nd) in high field up to 56 T, the resultant field temperature (H-T) phase diagrams are constructed. The diverse magnetic behaviors in RE2BIrO6 reveal that the 4f-Ir exchange interactions between the RE and Ir sublattices can mediate their magnetism.

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preprint2014arXiv

Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of B// and I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.

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preprint2014arXiv

High temperature superconducting FeSe films on SrTiO3 substrates

Interface enhanced superconductivity at two dimensional limit has become one of most intriguing research directions in condensed matter physics. Here, we report the superconducting properties of ultra-thin FeSe films with the thickness of one unit cell (1-UC) grown on conductive and insulating SrTiO3 (STO) substrates. For the 1-UC FeSe on conductive STO substrate (Nb-STO), the magnetization versus temperature (M-T) measurement shows a diamagnetic signal at 85 K, suggesting the possibility of superconductivity appears at this high temperature. For the FeSe films on insulating STO substrate, systematic transport measurements were carried out and the sheet resistance of FeSe films exhibits Arrhenius TAFF behavior with a crossover from a single-vortex pinning region to a collective creep region. More intriguing, sign reversal of Hall resistance with temperature is observed, demonstrating a crossover from hole conduction to electron conduction above Tc in 1-UC FeSe films.

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