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Zheng Dai

Zheng Dai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Image classifiers can not be made robust to small perturbations

The sensitivity of image classifiers to small perturbations in the input is often viewed as a defect of their construction. We demonstrate that this sensitivity is a fundamental property of classifiers. For any arbitrary classifier over the set of $n$-by-$n$ images, we show that for all but one class it is possible to change the classification of all but a tiny fraction of the images in that class with a perturbation of size $O(n^{1/\max{(p,1)}})$ when measured in any $p$-norm for $p \geq 0$. We then discuss how this phenomenon relates to human visual perception and the potential implications for the design considerations of computer vision systems.

preprint2022arXiv

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.