Researcher profile

Zetian Mi

Zetian Mi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Graph-Collaborated Auto-Encoder Hashing for Multi-view Binary Clustering

Unsupervised hashing methods have attracted widespread attention with the explosive growth of large-scale data, which can greatly reduce storage and computation by learning compact binary codes. Existing unsupervised hashing methods attempt to exploit the valuable information from samples, which fails to take the local geometric structure of unlabeled samples into consideration. Moreover, hashing based on auto-encoders aims to minimize the reconstruction loss between the input data and binary codes, which ignores the potential consistency and complementarity of multiple sources data. To address the above issues, we propose a hashing algorithm based on auto-encoders for multi-view binary clustering, which dynamically learns affinity graphs with low-rank constraints and adopts collaboratively learning between auto-encoders and affinity graphs to learn a unified binary code, called Graph-Collaborated Auto-Encoder Hashing for Multi-view Binary Clustering (GCAE). Specifically, we propose a multi-view affinity graphs learning model with low-rank constraint, which can mine the underlying geometric information from multi-view data. Then, we design an encoder-decoder paradigm to collaborate the multiple affinity graphs, which can learn a unified binary code effectively. Notably, we impose the decorrelation and code balance constraints on binary codes to reduce the quantization errors. Finally, we utilize an alternating iterative optimization scheme to obtain the multi-view clustering results. Extensive experimental results on $5$ public datasets are provided to reveal the effectiveness of the algorithm and its superior performance over other state-of-the-art alternatives.

preprint2020arXiv

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.