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Zeng Liu

Zeng Liu contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2026arXiv

A Novel $αβ$-Approximation Method Based on Numerical Integration for Discretizing Continuous Systems

In this article, we propose a novel discretization method based on numerical integration for discretizing continuous systems, termed the $αβ$-approximation or Scalable Bilinear Transformation (SBT). In contrast to existing methods, the proposed method consists of two factors, i.e., shape factor ($α$) and time factor ($β$). Depending on the discretization technique applied, we identify two primary distortion modes in discrete resonant controllers: frequency warping and resonance damping. We further provide a theoretical explanation for these distortion modes, and demonstrate that the performance of the method is superior to all typical methods. The proposed method is implemented to discretize a quasi-resonant (QR) controller on a control board, achieving 25\% reduction in the root-mean-square error (RMSE) compared to the SOTA method. Finally, the approach is extended to discretizing a resonant controller of a grid-tied inverter. The efficacy of the proposed method is conclusively validated through favorable comparisons among the theory, simulation, and experiments.

preprint2022arXiv

Limit profiles for singularly perturbed Choquard equations with local repulsion

We study Choquard type equation of the form $$-Δu +\varepsilon u-(I_α*|u|^p)|u|^{p-2}u+|u|^{q-2}u=0\quad in \quad {\mathbb R}^N,\qquad\qquad(P_\varepsilon)$$ where $N\geq3$, $I_α$ is the Riesz potential with $α\in(0,N)$, $p>1$, $q>2$ and $\varepsilon\ge 0$. Equations of this type describe collective behaviour of self-interacting many-body systems. The nonlocal nonlinear term represents long-range attraction while the local nonlinear term represents short-range repulsion. In the first part of the paper for a nearly optimal range of parameters we prove the existence and study regularity and qualitative properties of positive groundstates of $(P_0)$ and of $(P_\varepsilon)$ with $\varepsilon>0$. We also study the existence of a compactly supported groundstate for an integral Thomas-Fermi type equation associated to $(P_\varepsilon)$. In the second part of the paper, for $\varepsilon\to 0$ we identify six different asymptotic regimes and provide a characterisation of the limit profiles of the groundstates of $(P_\varepsilon)$ in each of the regimes. We also outline three different asymptotic regimes in the case $\varepsilon\to\infty$. In one of the asymptotic regimes positive groundstates of $(P_\varepsilon)$ converge to a compactly supported Thomas-Fermi limit profile. This is a new and purely nonlocal phenomenon that can not be observed in the local prototype case of $(P_\varepsilon)$ with $α=0$. In particular, this provides a justification for the Thomas-Fermi approximation in astrophysical models of self-gravitating Bose-Einstein condensate.

preprint2021arXiv

Nonlinear Inequalities with Double Riesz Potentials

We investigate the nonnegative solutions to the nonlinear integral inequality $u \ge I_α\ast\big((I_β\ast u^p)u^q\big)$ a.e. in $\mathbb{R}^N$, where $α, β\in (0,N)$, $p, q>0$ and $I_α$, $I_β$ denote the Riesz potentials of order $α$ and $β$ respectively. Our approach relies on a nonlocal positivity principle which allows us to derive optimal ranges for the parameters $α$, $β$, $p$ and $q$ to describe the existence and the nonexistence of a solution. The optimal decay at infinity for such solutions is also discussed.

preprint2020arXiv

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.