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Zeila Zanolli

Zeila Zanolli contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

High-throughput analysis of Fröhlich-type polaron models

The electronic structure of condensed matter can be significantly affected by the electron-phonon interaction, leading to important phenomena such as electrical resistance, superconductivity or the formation of polarons. This interaction is often neglected in band structure calculations but can have a strong impact on band gaps or optical spectra. Commonly used frameworks for electron-phonon energy corrections are the Allen-Heine-Cardona theory and the Fröhlich model. While the latter shows qualitative agreement with experiment for many polar materials, its simplicity should bring hard limits to its applicability in real materials. Improvements can be made by introducing a generalized version of the model, which considers anisotropic and degenerate electronic bands, and multiple phonon branches. In this work, we search for trends and outliers on over a thousand materials in existing databases of phonon and electron band structures. We use our results to identify the limits of applicability of the standard Frölich model by comparing to the generalized version, and by testing its basic hypothesis of a large radius for the polaronic wavefunction and the corresponding atomic displacement cloud. Among our extended set of materials, most exhibit large polaron behavior as well as validity of the perturbative treatment. For the valence band, there is also a significant fraction of the materials for which the perturbative treatment cannot be applied and/or for which the size of the self-trapping region is close to the atomic repetition distance. We find a large variety of behaviors, and employ much more accurate, fully ab initio Allen-Heine-Cardona calculations to understand extreme cases, where the Fröhlich model should fail and unusually large zero-point renormalization energies occur.

preprint2022arXiv

Phonon-assisted luminescence in defect centers from many-body perturbation theory

Phonon-assisted luminescence is a key property of defect centers in semiconductors, and can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. The investigation of phonon-assisted luminescence usually employs phenomenological models, such as that of Huang and Rhys, with restrictive assumptions that can fail to be predictive. In this work, we predict luminescence and study exciton-phonon couplings within a rigorous many-body perturbation theory framework, an analysis that has never been performed for defect centers. In particular, we study the optical emission of the negatively-charged boron vacancy in 2D hexagonal boron nitride, which currently stands out among defect centers in 2D materials thanks to its promise for applications in quantum information and quantum sensing. We show that phonons are responsible for the observed luminescence, which otherwise would be dark due to symmetry. We also show that the symmetry breaking induced by the static Jahn-Teller effect is not able to describe the presence of the experimentally observed peak at 1.5 eV.

preprint2022arXiv

Tuning the Topological Band Gap of Bismuthene with Silicon-based Substrate

Some meta-stable polymorphs of bismuth monolayer (bismuthene) can host topologically nontrivial phases. However, it remains unclear if these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), silicon dioxide (SiO2) and that the proximity interaction in the heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that the van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigation and technological applications.

preprint2021arXiv

Manipulation of Spin Transport in Graphene/Transition Metal Dichalcogenide Heterobilayers upon Twisting

Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit coupling in graphene transition metal dichalcogenide heterobilayers. We found that by choosing a twist-angle of 30 degrees, the spin relaxation times increase by two orders of magnitude, opening a path to improve these heterostructures spin transport capability. Moreover, we demonstrate that strain and twist angle will modify the relative values of valley-Zeeman and Rashba spin-orbit coupling, allowing to tune the system into an ideal Dirac-Rashba regime. These results enable us to envision an answer for the variability of spin-orbit coupling found in different experiments and have significant consequences for applications that depend on polycrystallinity, where grains form at different orientations.

preprint2019arXiv

Low energy phases of bilayer Bi predicted by structure search in two dimensions

We employ an ab-initio structure search algorithm to explore the configurational space of Bi in quasi two dimensions. A confinement potential restricts the movement of atoms within a pre-defined thickness during structure search calculations within the minima hopping method to find the stable and metastable forms of bilayer Bi. In addition to recovering the two known low-energy structures (puckered monoclinic and buckled hexagonal), our calculations predict three new structures of bilayer Bi. We call these structures the $α$, $β$, and $γ$ phases of bilayer Bi, which are, respectively, 63, 72, and 83 meV/atom higher in energy than that of the monoclinic ground state, and thus potentially synthesizable using appropriate substrates. We also compare the structural, electronic, and vibrational properties of the different phases. The puckered monoclinic, buckled hexagonal, and $β$ phases exhibit a semiconducting energy gap, whereas $α$ and $γ$ phases are metallic. We notice an unusual Mexican-hat type band dispersion leading to a van Hove singularity in the buckled hexagonal bilayer Bi. Notably, we find symmetry-protected topological Dirac points in the electronic spectrum of the $γ$ phase. The new structures suggest that bilayer Bi provides a novel playground to study distortion-mediated metal-insulator phase transitions.