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Researcher profile

Zehao Lin

Zehao Lin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phArtificial IntelligenceComputation and Languageastro-ph.EPastro-ph.GAcond-mat.dis-nngr-qc

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Published work

8 published item(s)

preprint2026arXiv

Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors

Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancement of modern CMOS technologies. As transistors are scaled to even smaller dimensions, device channels inevitably enter low-dimensional regimes to achieve higher performance. Low-dimensional materials such as atomically thin oxide semiconductors, 2D van der Waals semiconductors, and 1D carbon nanotubes, have thus emerged as key candidates for extending Moore's law. Here, we reveal the fundamental distinction between three-dimensional and low-dimensional conductors arising from disorder-induced electron localization, which leads to the breakdown of Ohm's law and lateral linear scaling. We develop a quantitative model that captures the role of the disordered region, a unique characteristic intrinsically to low-dimensional transistors. Furthermore, the disorder-induced localization framework consistently explains experimental observations in atomically thin In2O3 field-effect transistors across variations in channel length, temperature, thickness, and post-annealing conditions. This work establishes a unified physical picture for understanding and optimizing disorder-driven electronic transport in low-dimensional transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Local Spiral Structure Traced by Red Clump Stars

Using the cross-matched data of Gaia EDR3 and the 2MASS Point Source Catalog, a sample of RC stars with parallax accuracies better than 20% is identified and used to reveal the nearby spiral pattern traced by old stars. As shown in the overdensity distribution of RC stars, there is an arc-like feature extended from $l~\sim$ 90$^\circ$ to $\sim$ 243$^\circ$, which passed close to the Sun. This feature is probably an arm segment traced by old stars, indicating the Galaxy potential in the vicinity of the Sun. By comparing to the spiral arms depicted by young objects, we found that there are considerable offsets between the two different components of Galactic spiral arms. The spiral arm traced by RC stars tends to have a larger pitch angle, hence a more loose wound pattern.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scaled indium oxide transistors fabricated using atomic layer deposition

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes is challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8 nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance, the devices exhibit high on-state currents of 3.1 A/mm at a drain voltage of 0.5 V and a transconductance of 1.5 S/mm at a drain voltage 1 V. Our devices are a promising alternative channel material for scaled transistors with back-end-of-line processing compatibility.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Light Deflection under the Gravitational Field of Jupiter -- Testing General Relativity

We measured the relative positions between two pairs of compact extragalactic sources (CESs), J1925-2219 \& J1923-2104 (C1--C2) and J1925-2219 \& J1928-2035 (C1--C3) on 2020 October 23--25 and 2021 February 5 (totaling four epochs), respectively, using the Very Long Baseline Array (VLBA) at 15 GHz. Accounting for the deflection angle dominated by Jupiter, as well as the contributions from the Sun, planets other than Earth, the Moon and Ganymede (the most massive of the solar system's moons), our theoretical calculations predict that the dynamical ranges of the relative positions across four epochs in R.A. of the C1--C2 pair and C1--C3 pair are 841.2 and 1127.9 $μ$as, respectively. The formal accuracy in R.A. is about 20 $μ$as, but the error in Decl. is poor. The measured standard deviations of the relative positions across the four epochs are 51.0 and 29.7 $μ$as in R.A. for C1--C2 and C1--C3, respectively. These values indicate that the accuracy of the post-Newtonian relativistic parameter, $γ$, is $\sim 0.061$ for C1--C2 and $\sim 0.026$ for C1--C3. Combining the two CES pairs, the measured value of $γ$ is $0.984 \pm 0.037$, which is comparable to the latest published results for Jupiter as a gravitational lens reported by Fomalont \& Kopeikin, i.e., $1.01 \pm 0.03$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

MTSS: Learn from Multiple Domain Teachers and Become a Multi-domain Dialogue Expert

How to build a high-quality multi-domain dialogue system is a challenging work due to its complicated and entangled dialogue state space among each domain, which seriously limits the quality of dialogue policy, and further affects the generated response. In this paper, we propose a novel method to acquire a satisfying policy and subtly circumvent the knotty dialogue state representation problem in the multi-domain setting. Inspired by real school teaching scenarios, our method is composed of multiple domain-specific teachers and a universal student. Each individual teacher only focuses on one specific domain and learns its corresponding domain knowledge and dialogue policy based on a precisely extracted single domain dialogue state representation. Then, these domain-specific teachers impart their domain knowledge and policies to a universal student model and collectively make this student model a multi-domain dialogue expert. Experiment results show that our method reaches competitive results with SOTAs in both multi-domain and single domain setting.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4E13 /cm2 at HfO2/In2O3 oxide/oxide interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Teacher-Student Framework Enhanced Multi-domain Dialogue Generation

Dialogue systems dealing with multi-domain tasks are highly required. How to record the state remains a key problem in a task-oriented dialogue system. Normally we use human-defined features as dialogue states and apply a state tracker to extract these features. However, the performance of such a system is limited by the error propagation of a state tracker. In this paper, we propose a dialogue generation model that needs no external state trackers and still benefits from human-labeled semantic data. By using a teacher-student framework, several teacher models are firstly trained in their individual domains, learn dialogue policies from labeled states. And then the learned knowledge and experience are merged and transferred to a universal student model, which takes raw utterance as its input. Experiments show that the dialogue system trained under our framework outperforms the one uses a belief tracker.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.

0 citations0 reviewsNo code linkedOpen access