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Ze-Yi Song

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cond-mat.str-el cond-mat.mtrl-sci

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preprint2016arXiv

Gate-induced Gap in Bilayer Graphene Suppressed by Coulomb Repulsion

We investigate the effect of on-site Coulomb repulsion $U$ on the band gap of the electrically gated bilayer graphene by employing coherent potential approximation in the paramagnetic state, based on an ionic two-layer Hubbard model. We find that, while either the on-site Coulomb repulsion $U$ or the external perpendicular electric field $E$ alone will favor a gapped state in the bilayer graphene, competition between them will surprisingly lead to a suppression of the gap amplitude. Our results can be applied to understand the discrepancies of gap size reported from optical and transport measurements, as well as the puzzling features observed in angular resolved photoemission spectroscopic study.

preprint2016arXiv

Interaction-induced metallic state in graphene on hexagonal boron nitride

The Coulomb interaction is widely known to enhance the effective mass of interacting particles and therefore tends to favor a localized state at commensurate filling. Here, we will show that, in contrast to this consensus, in a van der Waals heterostructure consisting of graphene and hexagon boron nitride (h-BN), the onsite Coulomb repulsion will at first destroy the localized state. This is due to the fact that the onsite Coulomb repulsion tends to suppress the asymmetry between neighboring carbons induced by h-BN substrate. We corroborate this surprising phenomenon by solving a tight-binding model with onsite Coulomb repulsion treated within coherent potential approximation, where hopping parameters are derived from density functional theory calculations based on the graphene/h-BN heterostructure. Our results indicate that both gapless and gapped states observed experimentally in graphene/h-BN heterostructures can be understood after a realistic value of the onsite Coulomb repulsion as well as different interlayer distances are taken into account. Finally, we propose ways to enhance the gapped state which is essential for potential application of graphene to next-generation electronics. Furthermore, we argue that band gap suppressed by many-body effect should happen in other van der Waals heterostructures.

preprint2014arXiv

Orbital Selective Mott Transition Induced by Orbitals with Distinct Noninteracting Densities of States

By applying dynamical mean-field theory in combination with exact diagonalization at zero temperature to a half-filled Hubbard model with two orbitals having distinct noninteracting densities of states, we show that an orbital selective Mott transition (OSMT) will take place even without crystal field splitting, differences in bandwidth and orbital degeneracy. We find that formation of local spin triplet states followed by a two-stage breakdown of the Kondo effect, rather than decoupling of charge degrees of freedom among different orbitals, is the underlying physics for the OSMT. The relevance of our findings to Ca$_{2-x}$Sr$_x$RuO$_4$ and the iron-based superconductors is discussed, and a decent candidate to detect such an origin for the OSMT is proposed.