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Researcher profile

Z. Ovadyahu

Z. Ovadyahu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.dis-nncond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

15 published item(s)

preprint2022arXiv

Interaction induced spatial correlations in a Disordered Glass

A consequence of the disorder and Coulomb interaction competition is the electron-glass phase observed in several Anderson-insulators. The disorder in these systems, typically degenerate semiconductors, is stronger than the interaction, more so the higher is the carrier-concentration N of the system. Here we report on a new feature observed in the electron-glass phase of In_{x}O with the lowest N yet studied. The feature, resolved as a broad peak in field-effect measurements, has not been recognized in previously studied Anderson-insulators. Several empirical facts associated with the phenomenon are consistent with the conjecture that it reflects a correlated charge-distribution. In particular, the feature may be turned on and off by gate-voltage maneuvering, suggesting the relevance of charge-arrangements. It may also be suppressed by either; temperature, non-ohmic field, or exposure to infrared illumination. After being washed-out, the feature reappears when the system is allowed to relax for sufficiently long time. A puzzling aspect that arises is the apparent absence of the phenomenon when the carrier-concentration increases above a certain value. This is reminiscent of the glass-transition conundrum except that the role of temperature in the latter is played by disorder. Analysis of these findings highlights several issues that challenge our understanding of the disorder-interaction interplay in Anderson insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Long-range influence of manipulating disordered-insulators locally

Localization of wavefunctions is arguably the most familiar effect of disorder in quantum systems. It has been recently argued [[V. Khemani, R. Nandkishore, and S. L. Sondhi, Nature Physics, 11, 560 (2015)] that, contrary to naive expectation, manipulation of a localized-site in the disordered medium may produce a disturbance over a length-scale much larger than the localization-length $ξ$. Here we report on the observation of this nonlocal phenomenon in electronic transport experiment. Being a wave property, visibility of this effect hinges upon quantum-coherence, and its spatial-scale may be ultimately limited by the phase-coherent length of the disordered insulator. Evidence for quantum coherence in the Anderson-insulating phase may be obtained from magneto-resistance measurements which however are useful mainly in thin-films. The technique used in this work offers an empirical method to measure this fundamental aspect of Anderson-insulators even in relatively thick samples.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural dynamics in thermal-treatment of amorphous indium-oxide films

Thermally-treating amorphous indium-oxide films is used in various basic studies as a means of tuning the system disorder. In this process the resistance of a given sample decreases while its amorphous structure and chemical composition is preserved. The main effect of the process is an increase in the system density which in turn leads to improved interatomic overlap which is easily detected as improved conductivity. A similar effect has been observed in studies of other amorphous systems that were subjected to pressure. In the current work we show that the Raman spectra of amorphous indium-oxide change in response to thermal-treatment in a similar way as in pressure experiments performed on other disordered and amorphous systems. We present a study of how thermal-treatment changes the system dynamics by monitoring the resistance versus time of indium-oxide films following various stages of thermal-treatment. The time dependence of the sample resistance fits the stretched exponential law with parameters that change systematically with further annealing. Implication of these results to slow dynamics phenomena that are governed by the Kohlrausch's law are discussed.

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preprint2015arXiv

Coexistence of Electron-Glass Phase and Persistent Photoconductivity in GeSbTe Compounds

It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to induce an appreciable effect seems surprising given the high carrier-concentration n of these ternary alloys. On the other hand, their high density of carriers makes GeSbTe films favorable candidates for exhibiting intrinsic electron-glass effects with long relaxation times. These are indeed observed in GeSbTe thin-films that are Anderson-localized. In particular, a memory-dip is observed in samples with sheet resistances larger than app. 100 kOhms at T=4K with similar characteristics as in other systems that exhibit intrinsic electron-glass effects. Persistent-photoconductivity however is observable in GeSbTe films even for sheet resistances of the order of 1 kOhm, well below the range of disorder required for observing electron-glass effects. These two non-equilibrium phenomena, PPC and electron-glass, are shown to be of different nature in terms of other aspects as well. In particular, their relaxation dynamics is qualitatively different; the excess conductance dG/G associated with PPC decays with time as a stretched exponential whereas a logarithmic relaxation law characterizes dG(t) of all electron-glasses studied to date. Surprisingly, the magnitude of the memory-dip is enhanced when the system is in the PPC state. This counter-intuitive result may be related to the compositional disorder in these materials extending over mesoscopic scales. Evidence in support of this scenario is presented and discussed.

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preprint2015arXiv

Infrared-Induced Sluggish Dynamics in the GeSbTe Electron Glass

The electron-glass dynamics of Anderson-localized GeSbTe films is dramatically slowed-down following a brief infrared illumination that increases the system carrier-concentration (and thus its conductance). These results demonstrate that the dynamics exhibited by electron-glasses is more sensitive to carrier-concentration than to disorder. In turn, this seems to imply that many-body effects such as the Orthogonality Catastrophe must play a role in the sluggish dynamics observed in the intrinsic electron-glasses.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermalization Processes in Interacting Anderson Insulators

This paper describes experiments utilizing a unique property of electron-glasses to gain information on the fundamental nature of the interacting Anderson-localized phase. The methodology is based on measuring the energy absorbed by the electronic system from alternating electromagnetic fields as function of their frequency. Experiments on three-dimensional (3D) amorphous indium-oxide films suggest that, in the strongly localized regime, the energy spectrum is discrete and inelastic electron-electron events are strongly suppressed. These results imply that, at low temperatures, electron thermalization and finite conductivity depend on coupling to the phonon bath. The situation is different for samples nearing the metal-insulator transition; in insulating samples that are close to the mobility-edge, energy absorption persists to much higher frequencies. Comparing these results with previously studied 2D samples [Ovadyahu, Phys. Rev. Lett., 108, 156602 (2012)] demonstrates that the mean-level spacing (on a single-particle basis) is not the only relevant scale in this problem. The possibility of de-localization by many-body effects and the relevance of a nearby mobility-edge (which may be a many-body edge) are discussed.

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preprint2014arXiv

Electron Glass in a three-dimensional system

We report on non-equilibrium transport features observed in experiments using three-dimensional amorphous indium-oxide films. It is demonstrated that all the features that characterize intrinsic electron-glasses which heretofore were seen in two-dimensional samples are also observed in field-effect measurements of systems that exhibit three-dimensional variable-range-hopping. In particular, a memory-dip is observed in samples configured with gate. The memory-dip width and magnitude support models that associate the phenomenon with the Coulomb-gap. The memory-dip and the glassy effects disappear once the quenched disorder in the system is reduced and the system becomes diffusive. This happens when the Ioffe-Regel dimensional parameter k_{F}l exceeds 0.3 which is the critical value for the metal-to-insulator transition in all versions of the amorphous indium-oxides [Phys. Rev. B 86, 165101 (2012)]. This confirms that being in the Anderson localized phase is a pre-requisite for observing the memory-dip and the associated glassy effects. The results of the gating experiments suggest that the out-of equilibrium effect caused by inserted charge extend over spatial scales considerably larger than the screening length.

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preprint2013arXiv

Intrinsic electron-glass effects in strongly-localized thallium-oxide films

Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated that, at liquid-helium temperatures, these films exhibit all the characteristic features of intrinsic electron-glasses. These include a slow (logarithmic in time) conductance-relaxation that may be induced by any of the following protocols: Quench-cooling from high temperatures, sudden change of gate-voltage, exposure to infrared radiation, and stressing the system with a non-Ohmic field. The microstructure of the films are characterized by electron microscopy and their carrier-concentration are measured by Hall effect. Field-effect experiments reveal a memory-dip that has a width compatible with the carrier-concentration of the system as compared with previously studied electron-glasses. It is observed that the common ingredient in all the systems that exhibit electron-glass effects is high carrier-concentration suggesting that their localized sites may be multi-occupied even when deep into the insulating regime. That lightly-doped semiconductors do not show intrinsic electron-glass effects is consistent with this empirical observation. The connection between the memory-dip and the Coulomb-gap is discussed in light of these findings.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Compositional disorder and tranport peculiarities in the amorphous indium-oxides

(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in that it has a much lower carrier concentration. As a measure of the static disorder we use the dimensionless parameter kFl. Thermal annealing is employed as the experimental handle to tune the disorder. On the metallic side of the transition, the low temperature transport exhibits weak-localization and electron-electron correlation effects characteristic of disordered electronic systems. The MIT occurs at a kFl~0.3 for both versions of the amorphous material. However, in contrast with the results obtained on the electron-rich version of this system, no sign of superconductivity is seen down to ~0.3K even for the most metallic sample used in the current study. This demonstrates that using kFl as a disorder parameter for the superconductor-insulator-transition (SIT) is an ill defined procedure. A microstructural study of the films, employing high resolution chemical analysis, gives evidence for spatial fluctuations of the stoichiometry. This brings to light that, while the films are amorphous and show excellent uniformity in transport measurements of macroscopic samples, they contain compositional fluctuations that extend over mesoscopic scales. It is argued that this compositional disorder may be the reason for the apparent violation of the Ioffe-Regel criterion in the two versions of the amorphous indium-oxide. However, more dramatic effects due to this disorder are expected when superconductivity sets in, which are in fact consistent with the prominent transport anomalies observed in the electron-rich version of indium-oxide. The relevance of compositional disorder to other systems near their SIT is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Suppression of inelastic electron-electron scattering in Anderson Insulators

We report on measurements of absorption from applied ac fields in Anderson-localized indium-oxide films. The absorption shows a roll-off at a frequency that is much smaller than the electron-electron scattering rate measured at the same temperature in diffusive samples of this material. These results are interpreted as evidence for discreteness of the energy spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microwave-Enhanced hopping-conductivity; a non-Ohmic Effect

Hopping conductivity is enhanced when exposed to microwave fields (Phys. Rev. Lett., 102, 206601, 2009). Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features of these results lead us to conjecture that the effect is due to a field-enhanced hopping, which is the high frequency version of the non-Ohmic effect, well known in the dc transport regime. Experimental evidence in support of this scenario is presented and discussed. It is pointed out that existing models for non-Ohmic behavior in the hopping regime may, at best, offer a qualitative explanation to experiments. In particular, they cannot account for the extremely low values of the threshold fields that mark the onset of non-Ohmic behavior.

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preprint2011arXiv

Optical excitation of Electron-Glasses

Electron-glasses can be readily driven far from equilibrium by a variety of means. Several mechanisms to excite the system and their relative merits are reviewed. In this study we focus on the process of exciting electron-glasses by interaction with near infrared radiation. The efficiency of this protocol varies considerably among different electron-glasses, but it only weakly depends on their resistance at liquid helium temperatures. A dramatic enhancement of the excitation efficiency is observed upon doping crystalline indium-oxide with Au. Some enhancement is observed also in samples doped with Pb but this enhancement fades away with time unlike the situation in the Au-doped samples. Several structural and analytical tools are used to characterize the changes in the materials that may be responsible for these effects. Possible routes by which high-frequency electromagnetic fields take the system far from equilibrium are discussed.

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preprint2010arXiv

Intrinsic electron-glassiness in strongly-localized Be films

We present results of out--of-equilibrium transport measurements made on strongly-localized Beryllium films and demonstrate that these films exhibit all the earmarks of intrinsic electron-glasses. These include slow (logarithmic) relaxation, memory effects, and more importantly, the observation of a memory dip that has a characteristic width compatible with the carrier-concentration of beryllium. The latter is an empirical signature of the electron-glass. Comparing various non-equilibrium attributes of the beryllium films with other systems that exhibit intrinsic electron-glasses behavior reveals that high carrier-concentration is their only common feature rather than the specifics of the disorder that rendered them insulating. It is suggested that this should be taken as an important hint for any theory that attempts to account for the surprisingly slow relaxation times observed in these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Decoherence in Disordered Conductors at Low Temperatures, the effect of Soft Local Excitations

The conduction electrons' dephasing rate, $τ_ϕ^{-1}$, is expected to vanish with the temperature. A very intriguing apparent saturation of this dephasing rate in several systems was recently reported at very low temperatures. The suggestion that this represents dephasing by zero-point fluctuations has generated both theoretical and experimental controversies. We start by proving that the dephasing rate must vanish at the $T\to 0$ limit, unless a large ground state degeneracy exists. This thermodynamic proof includes most systems of relevance and it is valid for any determination of $τ_ϕ$ from {\em linear} transport measurements. In fact, our experiments demonstrate unequivocally that indeed when strictly linear transport is used, the apparent low-temperature saturation of $τ_ϕ$ is eliminated. However, the conditions to be in the linear transport regime are more strict than hitherto expected. Another novel result of the experiments is that introducing heavy nonmagnetic impurities (gold) in our samples produces, even in linear transport, a shoulder in the dephasing rate at very low temperatures. We then show theoretically that low-lying local defects may produce a relatively large dephasing rate at low temperatures. However, as expected, this rate in fact vanishes when $T \to 0$, in agreement with our experimental observations.

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preprint2002arXiv

Impairing the memory of an electron-glass by IR excitation

We study the influence of various excitations on the anomalous field effect observed in insulating indium-oxide films. In conductance G versus gate-voltage Vg measurements one observes a characteristic cusp around the Vg at which the system has equilibrated. In the absence of any disturbance this cusp may persist for a long time after a new gate voltage was imposed on the sample and hence reflects a memory of the previous equilibrium state. This memory is believed to be related to the correlations between electrons. Here we show that exciting the conduction electrons by exposing the sample to IR light degrades this memory. We argue that any excitation that randomizes the system destroys the correlations and therefore impairs the memory.

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