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Z. F. Wang

Z. F. Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-connucl-ex

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Published work

18 published item(s)

preprint2022arXiv

Ferromagnetic Negative Charge-Transfer Insulator: from Theoretical Proposal to Material Realization

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as summarized in the well-known Goodenough-Kanamori-Anderson semi-empirical rules.Through first-principle calculations with the hybrid functional, PbO-type CrAs monolayer is mapped out to be a FNCTI, which possesses a band gap $\sim$ 0.35 eV, FM nearest-/next-nearest-neighbor exchange coupling strength $\sim$ 57/40 meV, and a high $T_c$ $\sim$ 1500 K respectively. It is believed that the existence of FNCTI validates the long-pending hypothesis by D. I. Khomskii and G. A. Sawatzky in 1997 [Solid State Commun. 102, 87 (1997)].

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preprint2021arXiv

Kekule Lattice in Graphdiyne: Coexistence of Phononic and Electronic Higher-Order Band Topology

The topological physics has been extensively studied in different kinds of bosonic and fermionic systems, ranging from artificial structures to natural materials. However, the coexistence of topological phonon and electron in one single material is seldom reported. Recently, graphdiyne is proposed to be a two-dimensional (2D) electronic second-order topological insulator (SOTI). In this work, based on density-functional tight-binding calculations, we found that graphdiyne is equivalent to the Kekule lattice, also realizing a 2D phononic SOTI in both out-of-plane and in-plane modes. Depending on edge terminations, the characterized topological corner states can be either inside or outside the bulk gap, which are tunable by local corner potential. Most remarkably, a unique selectivity of space and symmetry is revealed in electron-phonon coupling between the localized phononic and electronic topological corner states. Our results not only demonstrate the phononic higher-order band topology in a real carbon material, but also provide an opportunity to investigate the interplay between phononic and electronic higher-order topological states.

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preprint2021arXiv

Microscopic Theory of Superconducting Phase Diagram in Infinite-Layer Nickelates

Since the discovery of superconductivity in infinite-layer nickelates RNiO$_2$ (R=La, Pr, Nd), great research efforts have been paid to unveil its underlying superconducting mechanism. However, the physical origin of the intriguing hole-doped superconductivity phase diagram, characterized by a superconductivity dome sandwiched between two weak insulators, is still unclear. Here, we present a microscopic theory for electronic structure of nickelates from a fundamental model-based perspective. We found that the appearance of weak insulator phase in lightly and heavily hole-doped regime is dominated by Mottness and Hundness, respectively, exhibiting a unique orbital-selective doping originated from the competition of Hund interaction and crystal field splitting. Moreover, the superconducting phase can also be created in the "mixed" transition regime between Mott-insulator and Hund-induced insulator, exactly reproducing the experimentally observed superconducting phase diagram. Our findings not only demonstrate the orbital-dependent strong-correlation physics in Ni 3$d$ states, but also provide a unified understanding of superconducting phase diagram in hole-doped infinite-layer nickelates, which are distinct from the well-established paradigms in cuprates and iron pnictides.

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preprint2020arXiv

Doping dependence of electronic structure of infinite-layer NdNiO2

We investigate the electronic structure of nickelate superconductor NdNiO2 upon hole doping, by means of density-functional theory and dynamical mean-field theory. We demonstrate the strong intrinsic hybridization between strongly correlated states formed by Ni-3dx2-y2 orbital and itinerant electrons due to Nd-5d and Ni-3dz2 orbitals, producing a valence-fluctuating correlated metal as the normal state of hole-doped NdNiO2. The Hund's rule appears to play a dominating role on multi-orbital physics in the lightly doped compound, while its effect is gradually reduced by increasing the doping level. Crucially, the hole-doping leads to intricate effects on Ni-3d orbitals, such as a non-monotonic change of electron occupation in lightly doped level, and a flipping orbital configuration in the overdoped regime. Additionaly, we also map out the topology of Fermi surface at different doping levels. These findings render a preferred window to peek into electron pairing and superconductivity.

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preprint2019arXiv

Electronic and Magnetic Structure of Infinite-layer $\textrm{NdNiO}_2$: Trace of Antiferromagnetic Metal

The recent discovery of Sr-doped infinite-layer nickelate $\textrm{NdNiO}_2$ [D. Li et al. Nature 572, 624 (2019)] offers an exciting platform for investigating unconventional superconductivity in nickelatebased compounds. In this work, we present a first-principles calculations for the electronic and magnetic properties of undoped parent $\textrm{NdNiO}_2$. Intriguingly, we found that: 1) the paramagnetic phase has complex Fermi pockets with 3D characters near the Fermi level; 2) by including electronelectron interactions, 3d-electrons of Ni tend to form $(π, π, π)$ antiferromagnetic ordering at low temperatures; 3) with moderate interaction strength, 5d-electrons of Nd contribute small Fermi pockets that could weaken the magnetic order akin to the self-doping effect. Our results provide a plausible interpretation for the experimentally observed resistivity minimum and Hall coefficient drop. Moreover, we elucidate that antiferromagnetic ordering in $\textrm{NdNiO}_2$ is relatively weak, arising from the small exchange coupling between 3d-electrons of Niand also hybridization with 5d-electrons of Nd.

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preprint2015arXiv

Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface beta-InSe(0001) can possess "ideal" Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substrate band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green's function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states.

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preprint2014arXiv

Giant Rashba-Spin Splitting of Bi(111) Bilayer on Large Band Gap $β-$In$_2$Se$_3$

Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $β-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of 1.2~eV. We have investigated the electronic structure of BL on one quintuple-layer (QL) $β-$In$_2$Se$_3$(0001) using density functional theory calculation. It is found that the intermediate hybridization between BL and one QL $β-$In$_2$Se$_3$(0001) results in the formation of bands with giant Rashba spin splitting in the large band gap of the substrate. Furthermore the Rashba parameter $α_R$ can be increased significantly by tensile strain of substrate. Our findings provide a good candidate substrate for BL growth to experimentally realize spin splitting Rashba states with insignificant effect of spin degenerate states from the substrate.

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preprint2014arXiv

Orbit- and Atom-Resolved Spin Textures of Intrinsic, Extrinsic and Hybridized Dirac Cone States

Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of Bi(111) bilayer and a 3D TI Bi2Se3 or Bi2Te3. The spin texture is found to be the same for the intrinsic Dirac cone of Bi2Se3 or Bi2Te3 surface state, the extrinsic Dirac cone of Bi bilayer state induced by Rashba effect, and the hybridized Dirac cone between the former two states. Further orbit- and atom-resolved analysis shows that s and pz orbits have a clockwise (counterclockwise) spin rotation tangent to the iso-energy contour of upper (lower) Dirac cone, while px and py orbits have an additional radial spin component. The Dirac cone states may reside on different atomic layers, but have the same spin texture. Our results suggest that the unique spin texture of Dirac cone states is a signature property of spin-orbit coupling, independent of topology.

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preprint2014arXiv

Tuning Transport Properties of Topological Edge States of Bi(111) Bilayer Film by Edge Adsorption

Based on first-principles and tight-binding calculations, we report that the transport properties of topological edge states of zigzag Bi(111) nanoribbon can be significantly tuned by H edge adsorption. The Fermi velocity is increased by one order of magnitude, as the Dirac point is moved from Brillouin zone boundary to Brillouin zone center and the real-space distribution of Dirac states are made twice more delocalized. These intriguing changes are explained by an orbital filtering effect of edge H atoms, which removes certain components of $p$ orbits of edge Bi atoms that reshapes the topological edge states. In addition, the spin texture of the Dirac states is also modified, which is described by introducing an effective Hamiltonian. Our findings not only are of fundamental interest but also have practical implications in potential applications of topological insulators.

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preprint2013arXiv

Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical Dirac fermions from interfacing two gapped TI films, a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. The theoretical prediction is directly confirmed by experiment. We further show that the extrinsic helical Dirac fermions consists of predominantly Bi bilayer states, which are created by a giant Rashba effect due to interfacial charge transfer. Our findings provide a promising new method to create novel TI materials by interface engineering.

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preprint2013arXiv

Organic Topological Insulators in Organometallic Lattices

Topological insulators (TIs) are a recently discovered class of materials having insulating bulk electronic states but conducting boundary states distinguished by nontrivial topology. So far, several generations of TIs have been theoretically predicted and experimentally confirmed, all based on inorganic materials. Here, based on first-principles calculations, we predict a family of two-dimensional organic TIs made of organometallic lattices. Designed by assembling molecular building blocks of triphenyl-metal compounds with strong spin-orbit coupling into a hexagonal lattice, this new classes of organic TIs are shown to exhibit nontrivial topological edge states that are robust against significant lattice strain. We envision that organic TIs will greatly broaden the scientific and technological impact of TIs.

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preprint2013arXiv

Quantum Anomalous Hall Effect in 2D Organic Topological Insulators

Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall conductivity. So far, a number of theoretical proposals have been made to realize the QAHE, but all based on inorganic materials. Here, using first-principles calculations, we predict a family of 2D organic topological insulators (OTIs) for realizing the QAHE. Designed by assembling molecular building blocks of triphenyl-transition-metal compounds into a hexagonal lattice, this new classes of organic materials are shown to have a nonzero Chern number and exhibit a gapless chiral edge state within the Dirac gap.

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preprint2013arXiv

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

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preprint2010arXiv

Formation of Hydrogenated Graphene Nanoripples by Strain Engineering and Directed Surface Self-assembly

We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial approach: first by strain engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence their band gaps which share common features with graphene nanoribbons. A cycle of H adsorption/desorption at/from the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.

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preprint2008arXiv

Electronic Structure in Gapped Graphene with Coulomb Potential

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

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preprint2007arXiv

Quantum Dot in Z-shaped Graphene Nanoribbon

Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying junction length, we can alter the spatial confinement and the number of discrete levels within the junction. In addition, quantum dot can be realized regardless of substrate induced static disorder or irregular edges of the junction. This device can be used to easily design quantum dot devices. This platform can also be used to design zero-dimensional functional nanoscale electronic devices using graphene ribbons.

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preprint2006arXiv

Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study

In this paper, a real-space analytical expression for the free Green's function (propagator) of bilayer graphene is derived based on the effective-mass approximation. Green's function displays highly spatial anisotropy with three-fold rotational symmetry. The calculated local density of states (LDOS) of a perfect bilayer graphene produces the main features of the observed scanning tunneling microscopy (STM) images of graphite at low bias voltage. Some predicted features of the LDOS can be verified by STM measurements. In addition, we also calculate the LDOS of bilayer graphene with vacancies by using the multiple-scattering theory (scatterings are localized around the vacancy of bilayer graphene). We observe that the interference patterns are determined mainly by the intrinsic properties of the propagator and the symmetry of the vacancies.

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preprint1994arXiv

Dilepton production from p-p to Ca-Ca at the Bevalac

The DLS collaboration has recently completed a high statistics study of dilepton production at the Bevalac. In particular, we have measured dielectrons (e+e-) from p-p and p-d collisions to understand the basic dilepton production mechanisms in the energy range from 1.05 - 4.9 GeV. These data can be used to determine the basic processes which contribute to nucleon-nucleon dilepton production such as hadronic bremsstrahlung, vector meson processes, and hadronic Dalitz decay. The data show that a simple elastic bremsstrahlung calculation is insufficient to explain the data. Theoretical models are compared with the data. A new high statistics study of Ca-Ca at 1.05 A GeV has been made to study the collectivity of A-A collisions.

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