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Z. C. Wang

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Published work

2 published item(s)

preprint2020arXiv

Superconductivity-induced transverse plasma mode and phonon anomaly in the $c$-axis response of the bilayer compound RbCa$_2$Fe$_4$As$_4$F$_2$

With infrared spectroscopy we studied the out-of-plane ($c$-axis) response of the iron arsenide superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = Rb,Cs) which has a bilayer structure similar to the high $T_c$ cuprates YBa$_2$Cu$_3$O$_7$ (YBCO) and Bi$_2$Sr$_2$CaCu$_2$O$_8$ (Bi2212). In analogy to the cuprates, we observe a superconductivity-induced transverse plasma mode (tPM) and a phonon anomaly that are both signatures of local electric field effects that arise from a large difference between the local conductivities in the intra- and inter-bilayer regions. Using a multilayer model developed for the cuprates, we obtain a good description of the $c$-axis response and derive the local conductivities at $T \simeq T_c$ of $σ_1^{\mathrm{bl}}(ω\rightarrow 0) \simeq$ 1\,000 $Ω^{-1}\mathrm{cm}^{-1}$ and $σ_1^{\mathrm{int}}(ω\rightarrow 0) \simeq$ 15 $Ω^{-1}\mathrm{cm}^{-1}$, respectively, that are similar to the ones previously found in underdoped YBCO. Different from the cuprates, we find no evidence of a normal state pseudogap in terms of a partial suppression of the low-energy electronic states that sets in already well above $T_c$. There is also no clear sign of an onset of precursor superconducting pairing correlations well above $T_c \simeq$ 30~K. This highlights that the pseudogap and the precursor superconducting pairing well above $T_c$ are unique features of the cuprates with their strong electronic correlations and, for example, not just the result of a strongly anisotropic electronic response due to the layered crystal structure.

preprint2012arXiv

Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing to the anomalous transport. In addition, when there exists a magnetization component in the surface plane, it is shown that only the component parallel to the junction interface has an influence on the conductance.