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Z. C. Wang

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2 publications

preprint2020arXiv

Superconductivity-induced transverse plasma mode and phonon anomaly in the cc-axis response of the bilayer compound RbCa2_2Fe4_4As4_4F2_2

With infrared spectroscopy we studied the out-of-plane (cc-axis) response of the iron arsenide superconductor ACa2_2Fe4_4As4_4F2_2 (A = Rb,Cs) which has a bilayer structure similar to the high TcT_c cuprates YBa2_2Cu3_3O7_7 (YBCO) and Bi2_2Sr2_2CaCu2_2O8_8 (Bi2212). In analogy to the cuprates, we observe a superconductivity-induced transverse plasma mode (tPM) and a phonon anomaly that are both signatures of local electric field effects that arise from a large difference between the local conductivities in the intra- and inter-bilayer regions. Using a multilayer model developed for the cuprates, we obtain a good description of the cc-axis response and derive the local conductivities at T≃TcT \simeq T_c of σ1bl(ω→0)≃σ_1^{\mathrm{bl}}(ω\rightarrow 0) \simeq 1\,000 Ω−1cm−1Ω^{-1}\mathrm{cm}^{-1} and σ1int(ω→0)≃σ_1^{\mathrm{int}}(ω\rightarrow 0) \simeq 15 Ω−1cm−1Ω^{-1}\mathrm{cm}^{-1}, respectively, that are similar to the ones previously found in underdoped YBCO. Different from the cuprates, we find no evidence of a normal state pseudogap in terms of a partial suppression of the low-energy electronic states that sets in already well above TcT_c. There is also no clear sign of an onset of precursor superconducting pairing correlations well above Tc≃T_c \simeq 30~K. This highlights that the pseudogap and the precursor superconducting pairing well above TcT_c are unique features of the cuprates with their strong electronic correlations and, for example, not just the result of a strongly anisotropic electronic response due to the layered crystal structure.

preprint2012arXiv

Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing to the anomalous transport. In addition, when there exists a magnetization component in the surface plane, it is shown that only the component parallel to the junction interface has an influence on the conductance.

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