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Yusung Kim

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cond-mat.mes-hall Emerging Technologies physics.med-ph

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preprint2026arXiv

Dosimetric Impact of Hidden Input Parameters in Inverse Optimization Algorithms for GYN HDR Brachytherapy

Inverse optimization (IO) algorithms are used in GYN HDR brachytherapy planning, with user parameter settings embedded in commercial TPS. To examine the dosimetric influence of hidden input parameters in three IO algorithms-IPSA, HIPO, and MCO-for GYN HDR brachytherapy across two applicator types. In-house implementations of IPSA, HIPO, and MCO were implemented and evaluated against retrospectively generated commercial TPS plans (Oncentra Brachy) using identical clinical input parameters across 24 cervical cancer cases (18 T&O; 6 T&O+Needles (T&O+N)). Each IO algorithm was assessed using 1k combinations of hidden parameters (e.g., dwell-time modulation constraints, convergence thresholds). Cumulative DVH curves and dosimetric indices (HR-CTV D98/D90, OAR D2cc) were compared with commercial plans. Standard deviations (SD) of DVH differences were used to characterize sensitivity to hidden parameters. For HR-CTV, SD values in T&O+N cases reached 23.0 Gy and 7.1 Gy for MCO and HIPO, respectively, with corresponding average values of 55.8 Gy and 19.7 Gy. In T&O cases, HR-CTV SD values reached 4.9 Gy and 3.3 Gy for HIPO and IPSA, respectively, with average values of 20.1 Gy and 8.6 Gy. MCO exhibited the highest sensitivity, followed by HIPO and IPSA. T&O+N cases showed greater sensitivity than T&O cases. Absolute differences in HR-CTV D90 (D98) relative to commercial algorithms reached up to 33.3 Gy (28.4) for T&O+N cases and 10.8 Gy (8.5) for T&O cases. For OARs, absolute D2cc differences in T&O+N (T&O) cases reached up to 8.6 Gy (2.3) for rectum, 17 Gy (10.2) for bladder, 14.8 Gy (3.9) for sigmoid, and 7.0 Gy (8.1) for bowel. Hidden input parameter settings significantly impact on GYN HDR plans, with target coverage up to 28.4 Gy across IO algorithms for both T&O and T&O+N cases. The findings in this study shown the potential to improve plans through hidden input parameter optimization.

preprint2014arXiv

Spin Orbit Torque Based Electronic Neuron

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis i.e. an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of the neuron input, and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward Artificial Neural Network (ANN) based on the SOT electronic neuron shows that it consumes ~3X lower power than a 45nm digital CMOS implementation, while reaching ~80% accuracy in the classification of one hundred images of handwritten digits from the MNIST dataset.

preprint2013arXiv

DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. Moreover, due to inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10X improvement in write energy over the standard 1T1R STT-MRAM memory cell, and 1.6X faster read operation compared to single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.