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Researcher profile

Yusuf Wicaksono

Yusuf Wicaksono contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Discovery of nanographene for hydrogen storage solving low reversibility issues

We found good reversibility of hydrogen uptake-release in vacancy-centered hexagonal armchair nanographene (VANG) based on density functional theory calculation. VANG has a triply hydrogenated vacancy (V$_{111}$) at the center and acts as a self-catalytic property to reduce an activation barrier of hydrogen uptake-release. We found remarkable features in an almost equal value of the activation energy barrier of 1.19 eV for hydrogen uptake and 1.25 eV for hydrogen release on V$_{111}$ of VANG. The dehydrogenation showed slightly exothermic and the hydrogenation became slightly endothermic, suggesting the efficiency of hydrogen uptake-release. In high hydrogen coverage, the quintuply hydrogenated vacancy (V$_{221}$) is formed with some hydrogenated located in the in-plane and armchair edges. This structure produces an exothermic hydrogen release from the in-plane with an energy barrier of not more than 2 eV. This finding potentially addresses the low reversibility issues in the organic chemical hydrides as hydrogen storage materials.

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preprint2021arXiv

High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission

This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/$n$hBN/Ni(111) with $n$ = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at both the upper and lower interfaces between the Ni slabs and hBN were found to stabilize the system. The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit a high tunneling magnetoresistance (TMR) ratio at ~0.28 eV for $n$ = 2 and 0.34 eV for $n$ > 2, which are slightly higher than the Fermi energy. The observed shifting of this high TMR ratio originates from the transmission of electrons through the surface states of the $d_{z^2}$-orbital of Ni atoms at interfaces which are hybridized with the $p_z$-orbital of N atoms. In the case of $n$ > 2, the proximity effect causes an evanescent wave, contributing to decreasing transmission probability but increasing the TMR ratio. However, TMR ratio, as well as transmission probability, was found to be increased, by replacing the unhybridized hBN layer of the Ni/3hBN/Ni MTJ with graphene, thus becoming Ni/hBN-Gr-hBN/Ni. A TMR ratio as high as ~1200% was observed at an energy of 0.34 eV, which is higher than the Fermi energy. Furthermore, a design is proposed for a device based on a new reading mechanism using the high TMR observed just above the Fermi energy level.

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preprint2019arXiv

Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material

We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni(111) with a slab with three Ni atomic layers to determine the exact atom arrangement at the interface. The density functional theory calculations for 36 stacking arrangements, which are doubled with respect to the magnetic alignment of slabs in an anti-parallel configuration (APC) and parallel configuration (PC), revealed that the number of formed weak chemical bonds, in the pd-hybridization between the N and Ni atoms, is decisive. A maximum of two pd-hybridization bonds stabilized the structure, with APC proving to be the most favorable magnetic alignment, in line with the results of previous experimental studies. In the lowest energy state, an induced magnetic moment at an N site appears when N is moved closer to one of the Ni atoms. Interestingly, the moment direction is switched by the position of the N layer in the resulting bi-stable state with electrical polarization when APC is chosen. The transmission probability calculation of Ni/hBN/Ni having the determined interface structure at the center of the junction exhibits a spin-filtering effect where the spin-polarized current is controlled by the electric field when a field-induced reversal of the polarization is realized.

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