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Researcher profile

Muhammad Aziz Majidi

Muhammad Aziz Majidi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Effect of interfacial spin mixing conductance on gyromagnetic ratio of Gd substituted Y$_{3}$Fe$_{5}$O$_{12}$

Due to its low intrinsic damping, Y$_3$Fe$_5$O$_{12}$ and its substituted variations are often used for ferromagnetic layer at spin pumping experiment. Spin pumping is an interfacial spin current generation in the interface of ferromagnet and non-magnetic metal, governed by spin mixing conductance parameter $G^{\uparrow\downarrow}$. $G^{\uparrow\downarrow}$ has been shown to enhance the damping of the ferromagnetic layer. The theory suggested that the effect of $G^{\uparrow\downarrow}$ on gyromagnetic ratio only come from its negligible imaginary part. In this article, we show that the different damping of ferrimagnetic lattices induced by $G^{\uparrow\downarrow}$ can affect the gyromagnetic ratio of Gd-substituted Y$_3$Fe$_5$O$_{12}$.

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preprint2022arXiv

Enhancement of spin mixing conductance by $s$-$d$ orbital hybridization in heavy metals

In a magnetic multilayer, the spin transfer between localized magnetization dynamics and itinerant conduction spin arises from the interaction between a normal metal and an adjacent ferromagnetic layer. The spin-mixing conductance then governs the spin-transfer torques and spin pumping at the magnetic interface. Theoretical description of spin-mixing conductance at the magnetic interface often employs a single conduction-band model. However, there is orbital hybridization between conduction $s$ electron and localized $d$ electron of the heavy transition metal, in which the single conduction-band model is insufficient to describe the $s$-$d$ orbital hybridization. In this work, using the generalized Anderson model, we estimate the spin-mixing conductance that arises from the $s$-$d$ orbital hybridization. We find that the orbital hybridization increases the magnitude of the spin-mixing conductance.

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preprint2021arXiv

High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission

This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/$n$hBN/Ni(111) with $n$ = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at both the upper and lower interfaces between the Ni slabs and hBN were found to stabilize the system. The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit a high tunneling magnetoresistance (TMR) ratio at ~0.28 eV for $n$ = 2 and 0.34 eV for $n$ > 2, which are slightly higher than the Fermi energy. The observed shifting of this high TMR ratio originates from the transmission of electrons through the surface states of the $d_{z^2}$-orbital of Ni atoms at interfaces which are hybridized with the $p_z$-orbital of N atoms. In the case of $n$ > 2, the proximity effect causes an evanescent wave, contributing to decreasing transmission probability but increasing the TMR ratio. However, TMR ratio, as well as transmission probability, was found to be increased, by replacing the unhybridized hBN layer of the Ni/3hBN/Ni MTJ with graphene, thus becoming Ni/hBN-Gr-hBN/Ni. A TMR ratio as high as ~1200% was observed at an energy of 0.34 eV, which is higher than the Fermi energy. Furthermore, a design is proposed for a device based on a new reading mechanism using the high TMR observed just above the Fermi energy level.

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preprint2019arXiv

Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material

We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni(111) with a slab with three Ni atomic layers to determine the exact atom arrangement at the interface. The density functional theory calculations for 36 stacking arrangements, which are doubled with respect to the magnetic alignment of slabs in an anti-parallel configuration (APC) and parallel configuration (PC), revealed that the number of formed weak chemical bonds, in the pd-hybridization between the N and Ni atoms, is decisive. A maximum of two pd-hybridization bonds stabilized the structure, with APC proving to be the most favorable magnetic alignment, in line with the results of previous experimental studies. In the lowest energy state, an induced magnetic moment at an N site appears when N is moved closer to one of the Ni atoms. Interestingly, the moment direction is switched by the position of the N layer in the resulting bi-stable state with electrical polarization when APC is chosen. The transmission probability calculation of Ni/hBN/Ni having the determined interface structure at the center of the junction exhibits a spin-filtering effect where the spin-polarized current is controlled by the electric field when a field-induced reversal of the polarization is realized.

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