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It is demonstrated that a new nodal point is forming and a domain with anomalous dispersion is unfolding in the spectrum of charge carriers in graphene, when the concentration of weakly bound impurities exceeds a certain critical value.
The electrical conductivity of graphene containing point defects is studied within the binary alloy model in its dependence on the Fermi level position at the zero temperature. It is found that the minimal conductivity value does not have a universal character and corresponds to the impurity resonance energy rather than to the Dirac point position in the spectrum. The substantial asymmetry of the resulting dependence of the conductivity on the gate voltage magnitude is attributed as well to this same shift of the conductivity minimum to the resonance state energy.
We demonstrate that the spectrum rearrangement can be considered as a precursor of the metal-insulator transition observed in graphene dosed with hydrogen atoms. The Anderson-type transition is attributed to the coincidence between the Fermi level and the mobility edge, which appearance is induced by the spectrum rearrangement. Available experimental data are thoroughly compared to the theoretical results for the Lifshitz impurity model.
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