Researcher profile

Yuriy G. Semenov

Yuriy G. Semenov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Spin Wave Generation via Localized Spin-Orbit Torque in an Antiferromagnet-Topological Insulator Heterostructure

The spin-orbit torque induced by a topological insulator (TI) is theoretically examined for spin wave generation in a neighboring antiferromagnetic thin film. The investigation is based on the micromagnetic simulation of Néel vector dynamics and the analysis of transport properties in the TI. The results clearly illustrate that propagating spin waves can be achieved in the antiferromagnetic thin-film strip through localized excitation, traveling over a long distance. The oscillation amplitude gradually decays due to the non-zero damping as the Néel vector precesses around the magnetic easy axis with a fixed frequency. The frequency is also found to be tunable via the strength of the driving electrical current density. While both the bulk and the surface states of the TI contribute to induce the effective torque, the calculation indicates that the surface current plays a dominant role over the bulk counterpart except in the heavily degenerate cases. Compared to the more commonly applied heavy metals, the use of a TI can substantially reduce the threshold current density to overcome the magnetic anisotropy, making it an efficient choice for spin wave generation. The Néel vector dynamics in the nano-oscillator geometry are examined as well.

preprint2015arXiv

Conductance Discontinuity on the Surface of a Topological Insulator with Magnetic Electrodes

Asymmetric electrical conductance is theoretically demonstrated on the surface of a topological insulator (TI) in the limit of infinitesimally small forward and reverse biases between two spin selective electrodes. The discontinuous behavior relies on the spin-momentum interlocked nature of TI surface electrons together with the resulting imbalance in the coupling coefficients between the electrodes and TI surface states. The analysis is based on a transmission matrix model that, in combination with a phenomenological treatment for the diffusive limit, accounts for both ballistic and scattered paths simultaneously. With the estimated conductance asymmetry over a factor of 10, implementation in the ratchet-like applications and low-voltage rectification circuits appears practicable.

preprint2014arXiv

Spin Logic via Controlled Correlation in Nanomagnet-Dirac Fermion Heterostructures

A hybrid structure combining the advantages of topological insulator (TI), dielectric ferromagnet (FM), and graphene is investigated to realize the electrically controlled correlation between electronic and magnetic subsystems for low-power, high-functional applications. Two-dimensional Dirac fermion states provide an ideal environment to facilitate strong coupling through the surface interactions with proximate materials. The unique properties of FM-TI and FM-graphene interfaces make it possible for active "manipulation" and "propagation", respectively, of the information state variable based solely on the spin logic platform through electrical gate biases. Our theoretical analysis verifies the feasibility of the concept for logic application with both current-driven and current-less interconnect approaches. The device/circuit characteristics are also examined in realistic conditions, suggesting the desired low-power performance with the estimated energy consumption for COPY/NOT as low as the \textit{attojoule} level.

preprint2014arXiv

Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy

We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis suggests that a collective contribution of two potential processes may explain the valley relaxation in single layer WS2. One process involves direct scattering of excitons from K to K' valleys with a spin flip-flop interaction. The other mechanism involves scattering through spin degenerate Gamma valley. This second process is thermally activated with an Arrhenius behavior due to the energy barrier between Gamma and K valleys.

preprint2012arXiv

Tunable photo-galvanic effect on topological insulator surfaces via proximity interactions

An unusual photo-galvanic effect is predicted on the topological insulator surface when its semi-metallic electronic spectrum is modified by an adjacent ferromagnet. The effect is correlated with light absorption in a wide frequency range (from a few to hundreds of meV) and produces a pronounced response that is not only resonant to the photon energy but also tunable by an external electrical bias. The exceptionally strong peak photocurrent of the order of $μ$A/cm may be achieved at elevated temperatures with the illumination power of 1 W/cm$^2$ in the THz range on Bi$_2$Se$_3$. These advantages could enable room-temperature detection of far-infrared radiation.