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Researcher profile

Yuriy Bomze

Yuriy Bomze contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

4 published item(s)

preprint2016arXiv

Critical current scaling in long diffusive graphene-based Josephson junctions

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Supercurrent in the quantum Hall regime

A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Retrapping Current, Self-Heating, and Hysteretic Current-Voltage Curves in Ultra-Narrow Superconducting Aluminum Nanowires

Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrapping current is found to be significantly smaller than the switching current at which the nanowire switches into the normal state from a superconducting state during a current up-sweep. For wires of different lengths, we analyze the heat removal due to various processes, including electronic and phonon processes. For a short wires 1.5 um in length, electronic thermal conduction is effective; for longer wires 10um in length, phonon conduction becomes important. We demonstrate that the measured retrapping current as a function of temperature can be quantitatively accounted for by the selfheating occurring in the normal portions of the nanowires to better than 20 % accuracy. For the phonon processes, the extracted thermal conduction parameters support the notion of a reduced phase-space below 3-dimensions, consistent with the phonon thermal wavelength having exceeded the lateral dimensions at temperatures below ~ 1.3K. Nevertheless, surprisingly the best fit was achieved with a functional form corresponding to 3-dimensional phonons, albeit requiring parameters far exceeding known values in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Single Phase Slip Limited Switching Current in 1-Dimensional Superconducting Al Nanowires

An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase as T^{2/3} at intermediate temperatures, and a rapid decrease close to T_c. Heat dissipation analysis indicates that a single phase slip is able to trigger switching at low and intermediate temperatures, whereby the T^{2/3} dependence arises from the thermal activation of a phase slip, while saturation at low temperatures provides striking evidence that the phase slips by macroscopic quantum tunneling.

0 citations0 reviewsNo code linkedOpen access