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Researcher profile

Ivan V. Borzenets

Ivan V. Borzenets contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

6 published item(s)

preprint2016arXiv

Critical current scaling in long diffusive graphene-based Josephson junctions

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The electrical control of the valley current in the limit of zero conductivity allows non-dissipative induction of valley current from electric field and thus provides a significant contribution to the advancement of non-dissipative electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Supercurrent in the quantum Hall regime

A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Phase Transition in a Resonant Level Coupled to Interacting Leads

An interacting one-dimensional electron system, the Luttinger liquid, is distinct from the "conventional" Fermi liquids formed by interacting electrons in two and three dimensions. Some of its most spectacular properties are revealed in the process of electron tunneling: as a function of the applied bias or temperature the tunneling current demonstrates a non-trivial power-law suppression. Here, we create a system which emulates tunneling in a Luttinger liquid, by controlling the interaction of the tunneling electron with its environment. We further replace a single tunneling barrier with a double-barrier resonant level structure and investigate resonant tunneling between Luttinger liquids. For the first time, we observe perfect transparency of the resonant level embedded in the interacting environment, while the width of the resonance tends to zero. We argue that this unique behavior results from many-body physics of interacting electrons and signals the presence of a quantum phase transition (QPT). In our samples many parameters, including the interaction strength, can be precisely controlled; thus, we have created an attractive model system for studying quantum critical phenomena in general. Our work therefore has broadly reaching implications for understanding QPTs in more complex systems, such as cold atoms and strongly correlated bulk materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Retrapping Current, Self-Heating, and Hysteretic Current-Voltage Curves in Ultra-Narrow Superconducting Aluminum Nanowires

Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrapping current is found to be significantly smaller than the switching current at which the nanowire switches into the normal state from a superconducting state during a current up-sweep. For wires of different lengths, we analyze the heat removal due to various processes, including electronic and phonon processes. For a short wires 1.5 um in length, electronic thermal conduction is effective; for longer wires 10um in length, phonon conduction becomes important. We demonstrate that the measured retrapping current as a function of temperature can be quantitatively accounted for by the selfheating occurring in the normal portions of the nanowires to better than 20 % accuracy. For the phonon processes, the extracted thermal conduction parameters support the notion of a reduced phase-space below 3-dimensions, consistent with the phonon thermal wavelength having exceeded the lateral dimensions at temperatures below ~ 1.3K. Nevertheless, surprisingly the best fit was achieved with a functional form corresponding to 3-dimensional phonons, albeit requiring parameters far exceeding known values in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Single Phase Slip Limited Switching Current in 1-Dimensional Superconducting Al Nanowires

An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase as T^{2/3} at intermediate temperatures, and a rapid decrease close to T_c. Heat dissipation analysis indicates that a single phase slip is able to trigger switching at low and intermediate temperatures, whereby the T^{2/3} dependence arises from the thermal activation of a phase slip, while saturation at low temperatures provides striking evidence that the phase slips by macroscopic quantum tunneling.

0 citations0 reviewsNo code linkedOpen access