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Yuri M. Brovman

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2 published item(s)

preprint2021arXiv

Personalized Embedding-based e-Commerce Recommendations at eBay

Recommender systems are an essential component of e-commerce marketplaces, helping consumers navigate massive amounts of inventory and find what they need or love. In this paper, we present an approach for generating personalized item recommendations in an e-commerce marketplace by learning to embed items and users in the same vector space. In order to alleviate the considerable cold-start problem present in large marketplaces, item and user embeddings are computed using content features and multi-modal onsite user activity respectively. Data ablation is incorporated into the offline model training process to improve the robustness of the production system. In offline evaluation using a dataset collected from eBay traffic, our approach was able to improve the Recall@k metric over the Recently-Viewed-Item (RVI) method. This approach to generating personalized recommendations has been launched to serve production traffic, and the corresponding scalable engineering architecture is also presented. Initial A/B test results show that compared to the current personalized recommendation module in production, the proposed method increases the surface rate by $\sim$6\% to generate recommendations for 90\% of listing page impressions.

preprint2013arXiv

Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 μ$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires.