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Researcher profile

Yunyun Fan

Yunyun Fan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-det

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Published work

2 published item(s)

preprint2022arXiv

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project.

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preprint2019arXiv

Charaterization of the first prototype IHEP-NDL LGAD sensor

The timing measurement of charged particles using silicon detector is widely used in synchrotron source as X-ray detectors, in time-of-flight mass spectrometer and especially in large collider experiment. To reduce the drastically event pile-up of high-luminosity large hadron collider (HL-LHC), a new concept of 4-dimension detector including timing and positon has been proposed. One of the candidates for the 4-dimension detector is a new kind of silicon detector called Low Gain Avalanche Diode (LGAD). In China, Institute of High Energy Physics (IHEP) Chinese Academic Science cooperated with Novel Device Laboratory (NDL) at Beijing Normal University have fabricated a series of LGAD sensors. The characterization of the first prototype of IHEP-NDL sensors is presented including leakage current and sensor capacitance measurement. A test system for the time resolution of jitter term using pico-second laser and fast sampling rate oscilloscope is also setup, and the time resolution of 10 ps can be achieved with these sensors.

0 citations0 reviewsNo code linkedOpen access