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We experimentally demonstrate a room-temperature, voltage controlled, short-term quantum photonics memory on a lithium niobate chip. Our chip is capable of resolving 100 ps time steps with 0.74 dB loss per round-trip.
Quantum technology is poised to enable a step change in human capability for computing, communications and sensing. Photons are indispensable as carriers of quantum information - they travel at the fastest possible speed and readily protected from decoherence. However, the system requires thousands of near-transparent components with ultra-low-latency control. For quantum technology to be implemented, a new paradigm photonic system is required: one with in-built coherence, stability, the ability to define arbitrary circuits, and a path to manufacturability. Silicon photonics has unparalleled density and component performance, which, with CMOS compatible fabrication, place it in a strong position for a scalable quantum photonics platform. This paper is a progress report on silicon quantum photonics, focused on developments in the past five years. We provide an introduction on silicon quantum photonic component and the challenges in the field, summarise the current state-of-the-art and identify outstanding technical challenges, as well as promising avenues of future research. We also resolve a conflict in the definition of Hong-Ou-Mandel interference visibility in integrated quantum photonic experiments, needed for fair comparison of photon quality across different platforms. Our aim is the development of scalability on the platform, to which end we point the way to ever-closer integration, toward silicon quantum photonic systems-on-a-chip.
Efficient generation of single photons is one of the key challenges of building photonic quantum technology, such as quantum computers and long-distance quantum networks. Photon source multiplexing -- where successful pair generation is heralded by the detection of one of the photons, and its partner is routed to a single mode output -- has long been known to offer a concrete solution, with output probability tending toward unity as loss is reduced. Here, we present a temporally multiplexed integrated single photon source based on a silicon waveguide and a low-loss fibre switch and loop architecture, which achieves enhancement of the single photon output probability of $4.5 \pm 0.5$, while retaining $g^{(2)}(0) = 0.01$.
Exploiting semiconductor fabrication techniques, natural carriers of quantum information such as atoms, electrons, and photons can be embedded in scalable integrated devices. Integrated optics provides a versatile platform for large-scale quantum information processing and transceiving with photons. Scaling up the integrated devices for quantum applications requires highperformance single-photon generation and photonic qubit-qubit entangling operations. However, previous demonstrations report major challenges in producing multiple bright, pure and identical single-photons, and entangling multiple photonic qubits with high fidelity. Another notable challenge is to noiselessly interface multiphoton sources and multiqubit operators in a single device. Here we demonstrate on-chip genuine multipartite entanglement and quantum teleportation in silicon, by coherently controlling an integrated network of microresonator nonlinear single-photon sources and linear-optic multiqubit entangling circuits. The microresonators are engineered to locally enhance the nonlinearity, producing multiple frequencyuncorrelated and indistinguishable single-photons, without requiring any spectral filtering. The multiqubit states are processed in a programmable linear circuit facilitating Bell-projection and fusion operation in a measurement-based manner. We benchmark key functionalities, such as intra-/inter-chip teleportation of quantum states, and generation of four-photon Greenberger-HorneZeilinger entangled states. The production, control, and transceiving of states are all achieved in micrometer-scale silicon chips, fabricated by complementary metal-oxide-semiconductor processes. Our work lays the groundwork for scalable on-chip multiphoton technologies for quantum computing and communication.
On-chip optical interconnect has been widely accepted as a promising technology to realize future large-scale multiprocessors. Mode-division multiplexing (MDM) provides a new degree of freedom for optical interconnects to dramatically increase the link capacity. Present on-chip multimode devices are based on traditional wave-optics. Although large amount of computation and optimization are adopted to support more modes, mode-independent manipulation is still hard to be achieved due to severe mode dispersion. Here, we propose a universal solution to standardize the design of fundamental multimode building blocks, by introducing a geometrical-optics-like concept adopting waveguide width larger than the working wavelength. The proposed solution can tackle a group of modes at the same time with very simple processes, avoiding demultiplexing procedure and ensuring compact footprint. Compare to conventional schemes, it is scalable to larger mode channels without increasing the complexity and whole footprint. As a proof of concept, we demonstrate a set of multimode building blocks including crossing, bend, coupler and switches. Low losses of multimode waveguide crossing and bend are achieved, as well as ultra-low power consumption of the multimode switch is realized since it enables reconfigurable routing for a group of modes simultaneously. Our work promotes the multimode photonics research and makes the MDM technique more practical.
High-dimensional quantum states have already settled their advantages in different quantum technology applications. However, their reliable transmission in fiber links remains an open challenge that must be addressed to boost their application, e.g. in the future quantum internet. Here, we prove how path encoded high-dimensional quantum states can be reliably transmitted over a 2 km long multicore fiber, taking advantage of a phase-locked loop system guaranteeing a stable interferometric detection.
Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still limited by either weak light-graphene interaction or large resistance-capacitance product. Here, we demonstrate a waveguide coupled integrated graphene plasmonic photodetector on the silicon-on-insulator platform. Benefiting from plasmonic enhanced graphene-light interactions and subwavelength confinement of the optical energy, we present a small-footprint graphene-plasmonic photodetector with bandwidth beyond 110GHz and intrinsic responsivity of 360mA/W. Attributed to the unique electronic bandstructure of graphene and its ultra-broadband absorption, the operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact and high-speed optoelectronic devices for graphene-based optical interconnects.
Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10-9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.
Quantum key distribution (QKD) and quantum communication enable the secure exchange of information between remote parties. Currently, the distributed-phase-reference (DPR) protocols, which are based on weak coherent pulses, are among the most practical solutions for long-range QKD. During the last 10 years, long-distance fiber-based DPR systems have been successfully demonstrated, although fundamental obstacles such as intrinsic channel losses limit their performance. Here, we introduce the first two-dimensional DPR-QKD protocol in which information is encoded in the time and phase of weak coherent pulses. The ability of extracting two bits of information per detection event, enables a higher secret key rate in specific realistic network scenarios. Moreover, despite the use of more dimensions, the proposed protocol remains simple, practical, and fully integrable.
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.