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Yun-Shik Lee

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Published work

3 published item(s)

preprint2013arXiv

Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics

We report ultrafast pump-probe spectroscopy examining exciton dynamics in atomically thin MoS2. Spectrally- and temporally-resolved measurements are performed to investigate the interaction dynamics of two important direct-gap excitons (A and B) and their associated broadening kinetics. The two excitons show strongly correlated inter-excitonic dynamic, in which the transient blue-shifted excitonic absorption originates from the internal A-B excitonic interaction. The observed complex spectral response is determined by the exciton collision-induced linewidth broadening; the broadening of the B exciton linewidth in turn lowers the peak spectral amplitude of the A exciton. Resonant excitation at the B exciton energy reveals that inter-excitonic scattering plays a more important role in determining the broadening kinetics than free-carrier scattering.

preprint2011arXiv

Terahertz excitation of a coherent three-level Λ-type exciton-polariton microcavity mode

Interactions of few-cycle terahertz pulses with the induced optical polarization in a quantum-well microcavity reveal that the lower and higher exciton-polariton modes together with the optically forbidden 2p-exciton state form a unique Λ-type three-level system. Pronounced nonlinearities are observed via time-resolved strong-terahertz and weak-optical excitation spectroscopy and explained with a fully microscopic theory. The results show that the terahertz pulses strongly couple the exciton-polariton states to the 2p-exciton state while no resonant transition between the two polariton levels is observed.

preprint2011arXiv

Terahertz imaging and spectroscopy of large-area single-layer graphene

We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across the sample from σs = 1.7x10^-3 to 2.4x10^-3 Ω^-1 (sheet resistance, ρs = 420 - 590 Ω/sq).