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Researcher profile

Yulu Ren

Yulu Ren contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.comp-ph

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Published work

6 published item(s)

preprint2025arXiv

Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene

ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Two-dimensional antiferromagnetic semiconductor T'-MoTeI from first principles

Two-dimensional intrinsic antiferromagnetic semiconductors are expected to stand out in the spintronic field. The present work finds the monolayer T'-MoTeI is intrinsically an antiferromagnetic semiconductor by using first-principles calculation. Firstly, the dimerized distortion of the Mo atoms causes T'-MoTeI to have dynamic stability, which is different from the small imaginary frequency in the phonon spectrum of T-MoTeI. Secondly, T'-MoTeI is an indirect-bandgap semiconductor with 1.35 eV. Finally, in the systematic study of strain effects, there are significant changes in the electronic structure as well as the bandgap, but the antiferromagnetic ground state is not affected. Monte Carlo simulations predict that the Neel temperature of T'-MoTeI is 95 K. The results suggest that the monolayer T'-MoTeI can be a potential candidate for spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)

Despite the exceeding 23\% photovoltaic efficiency achieved in organic-inorganic hybrid perovskite solar cells obtaining, the stable materials with desirable band gap are rare and are highly desired. With the aid of first-principles calculations, we predict a new promising family of nontoxic inorganic double perovskites (DPs), namely, silicon (Si)-based halides A$_{2}$SiI$_{6}$ (A = K, Rb, Cs; X = Cl, Br, I). This family containing the earth-abundant Si could be applied for perovskite solar cells (PSCs). Particularly A$_{2}$SiI$_{6}$ exhibits superb physical traits, including suitable band gaps of 0.84-1.15 eV, dispersive lower conduction bands, small carrier effective masses, wide photon absorption in the visible range. Importantly, the good stability at high temperature renders them as promising optical absorbers for solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Large thermoelectric power factor of high-mobility 1T'' phase of transition-metal dichalcogenides

The experimental studies about monolayer transition metal dichalcogenides in the recent year reveal this kind of compounds have many metastable phases with unique physical properties, not just 1H phases. Here, we focus on the 1T'' phase and systematically investigate the electronic structures and transport properties of MX2 (M=Mo, W; X=S, Se, Te) using the first-principles calculations with Boltzmann transport theory. And among them, only three molybdenum compounds has small direct bandgap at K point, which derive from the distortion of octahedral-coordination [MoS6]. For these three cases, hole carrier mobility of MoSe2 is estimated as 690 cm^2/Vs at room temperature, far more high than that of other two MoX2. For the reason, the combination of the modest carrier effective mass and weak electron-phonon coupling lead to the outstanding transport performance of MoSe2. The Seebeck coefficient of MoSe2 is also evaluated as high as 300 10^-6 V/K at room temperature. Due to the temperature dependent mobility of T^-1.9 and higher Seebeck coefficient at low temperature, it is found that MoSe2 has a large thermoelectric power factor around 6 10^-3 W/mK^2 in the low to intermediate temperature range. The present results suggests 1T'' MoSe2 maybe a excellent candidate for thermoelectric material.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS$_3$

Recently, two-dimensional ferromagnetic semiconductors have been an important class of materials for many potential applications in spintronic devices. Based on density functional theory, we systematically explore the magnetic and electronic properties of CrGeS$_3$ with the monolayer structures. The comparison of total energy between different magnetic states ensures the ferromagnetic ground state of monolayer CrGeS$_3$. It is also shown that ferromagnetic and semiconducting properties are exhibited in monolayer CrGeS$_3$ with the magnetic moment of 3 $μ_{B}$ for each Cr atom, donated mainly by the intense $dp$$σ$-hybridization of Cr $e_g$-S $p$. There are the bandgap of 0.70 eV of spin-up state in the monolayer structure when 0.77 eV in spin-down state. The global gap is 0.34 eV (2.21 eV by using HSE06 functional), which originates from bonding $dpσ$ hybridized states of Cr $e_g$-S $p$ and unoccupied Cr $t_{2g}$-Ge $p$ hybridization. Besides, we estimate that the monolayer CrGeS$_3$ possesses the Curie temperature of 161 K by mean-field theory.

0 citations0 reviewsNo code linkedOpen access