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Qiaoqiao Li

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cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

First-principles prediction into robust high-performance photovoltaic double perovskites A $_{2}$ SiI $_{6}$ (A = K, Rb, Cs)

Despite the exceeding 23\% photovoltaic efficiency achieved in organic-inorganic hybrid perovskite solar cells obtaining, the stable materials with desirable band gap are rare and are highly desired. With the aid of first-principles calculations, we predict a new promising family of nontoxic inorganic double perovskites (DPs), namely, silicon (Si)-based halides A $_{2}$ SiI $_{6}$ (A = K, Rb, Cs; X = Cl, Br, I). This family containing the earth-abundant Si could be applied for perovskite solar cells (PSCs). Particularly A $_{2}$ SiI $_{6}$ exhibits superb physical traits, including suitable band gaps of 0.84-1.15 eV, dispersive lower conduction bands, small carrier effective masses, wide photon absorption in the visible range. Importantly, the good stability at high temperature renders them as promising optical absorbers for solar cells.

preprint2020arXiv

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI $_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ( $T_C$ ) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI $_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.

preprint2019arXiv

Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS $_3$

Recently, two-dimensional ferromagnetic semiconductors have been an important class of materials for many potential applications in spintronic devices. Based on density functional theory, we systematically explore the magnetic and electronic properties of CrGeS $_3$ with the monolayer structures. The comparison of total energy between different magnetic states ensures the ferromagnetic ground state of monolayer CrGeS $_3$ . It is also shown that ferromagnetic and semiconducting properties are exhibited in monolayer CrGeS $_3$ with the magnetic moment of 3 $μ_{B}$ for each Cr atom, donated mainly by the intense $dp$ $σ$ -hybridization of Cr $e_g$ -S $p$ . There are the bandgap of 0.70 eV of spin-up state in the monolayer structure when 0.77 eV in spin-down state. The global gap is 0.34 eV (2.21 eV by using HSE06 functional), which originates from bonding $dpσ$ hybridized states of Cr $e_g$ -S $p$ and unoccupied Cr $t_{2g}$ -Ge $p$ hybridization. Besides, we estimate that the monolayer CrGeS $_3$ possesses the Curie temperature of 161 K by mean-field theory.

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Qiaoqiao Li

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3 publications

First-principles prediction into robust high-performance photovoltaic double perovskites A $_{2}$ SiI $_{6}$ (A = K, Rb, Cs)

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS $_3$

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Qiaoqiao Li

Research overview

Is this your work?

3 publications

First-principles prediction into robust high-performance photovoltaic double perovskites A2_{2}2​SiI6_{6}6​ (A = K, Rb, Cs)

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS3_33​

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Building this map preview

First-principles prediction into robust high-performance photovoltaic double perovskites A $_{2}$ SiI $_{6}$ (A = K, Rb, Cs)

Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS $_3$