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Yuke Zhang

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Cryptography and Security eess.SY Systems and Control cond-mat.mtrl-sci math.CO

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preprint2022arXiv

TriLock: IC Protection with Tunable Corruptibility and Resilience to SAT and Removal Attacks

Sequential logic locking has been studied over the last decade as a method to protect sequential circuits from reverse engineering. However, most of the existing sequential logic locking techniques are threatened by increasingly more sophisticated SAT-based attacks, efficiently using input queries to a SAT solver to rule out incorrect keys, as well as removal attacks based on structural analysis. In this paper, we propose TriLock, a sequential logic locking method that simultaneously addresses these vulnerabilities. TriLock can achieve high, tunable functional corruptibility while still guaranteeing exponential queries to the SAT solver in a SAT-based attack. Further, it adopts a state re-encoding method to obscure the boundary between the original state registers and those inserted by the locking method, thus making it more difficult to detect and remove the locking-related components.

preprint2021arXiv

Fun-SAT: Functional Corruptibility-Guided SAT-Based Attack on Sequential Logic Encryption

The SAT attack has shown to be efficient against most combinational logic encryption methods. It can be extended to attack sequential logic encryption techniques by leveraging circuit unrolling and model checking methods. However, with no guidance on the number of times that a circuit needs to be unrolled to find the correct key, the attack tends to solve many time-consuming Boolean satisfiability (SAT) and model checking problems, which can significantly hamper its efficiency. In this paper, we introduce Fun-SAT, a functional corruptibility-guided SAT-based attack that can significantly decrease the SAT solving and model checking time of a SAT-based attack on sequential encryption by efficiently estimating the minimum required number of circuit unrollings. Fun-SAT relies on a notion of functional corruptibility for encrypted sequential circuits and its relationship with the required number of circuit unrollings in a SAT-based attack. Numerical results show that Fun-SAT can be, on average, 90x faster than previous attacks against state-of-the-art encryption methods, when both attacks successfully complete before a one-day time-out. Moreover, Fun-SAT completes before the time-out on many more circuits.

preprint2021arXiv

Perfect matching and distance spectral radius in graphs and bipartite graphs

A perfect matching in a graph $G$ is a set of nonadjacent edges covering every vertex of $G$. Motivated by recent progress on the relations between the eigenvalues and the matching number of a graph, in this paper, we aim to present a distance spectral radius condition to guarantee the existence of a perfect matching. Let $G$ be an $n$-vertex connected graph where $n$ is even and $λ_{1}(D(G))$ be the distance spectral radius of $G$. Then the following statements are true. \noindent$\rm{I)}$ If $4\le n\le10$ and ${λ}_{1} (D\left(G\right))\le {λ}_{1} (D(S_{n,{\frac{n}{2}}-1}))$, then $G$ contains a perfect matching unless $G\cong S_{n,{\frac{n}{2}-1}}$ where $S_{n,{\frac{n}{2}-1}}\cong K_{{\frac{n}{2}-1}}\vee ({\frac{n}{2}+1})K_1$. \noindent$\rm{II)}$ If $n\ge 12$ and ${λ}_{1} (D\left(G\right))\le {λ}_{1} (D(G^*))$, then $G$ contains a perfect matching unless $G\cong G^*$ where $G^*\cong K_1\vee (K_{n-3}\cup2K_1)$. Moreover, if $G$ is a connected $2n$-vertex balanced bipartite graph with $λ_{1}(D(G))\le λ_{1}(D(B_{n-1,n-2})) $, then $G$ contains a perfect matching, unless $G\cong B_{n-1,n-2}$ where $B_{n-1,n-2}$ is obtained from $K_{n,n-2}$ by attaching two pendent vertices to a vertex in the $n$-vertex part.

preprint2020arXiv

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly understood. In this paper, we employ density-functional-theory calculations to investigate structural and polarization properties of the R3m HfO2 phase. We find that the film thickness and in-plane compressive strain effects play a key role in stabilizing the R3m phase leading to robust ferroelectricity of [111]-oriented R3m HfO2.