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Researcher profile

Yuerui Lu

Yuerui Lu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hallphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Proton-driven patterning of bulk transition metal dichalcogenides

At the few-atom-thick limit, transition metal dichalcogenides (TMDs) exhibit a host of attractive electronic optical, and structural properties. The possibility to pattern these properties has a great impact on applied and fundamental research. Here, we demonstrate spatial control over the light emission, lattice deformation, and hydrogen storage in bulk TMDs. By low-energy proton irradiation, we create uniquely favorable conditions for the production and accumulation of molecular hydrogen just one or few monolayers beneath the crystal basal plane of bulk WS2, WSe2, WTe2, MoSe2, and MoS2 samples. H2 therein produced coalesces to form bubbles, which lead to the localized swelling of one X-M-X plane prevalently. This results eventually in the creation of atomically thin domes filled with molecular hydrogen at 10 atm. The domes emit light strongly well above room temperature and can store H2 indefinitely. They can be produced with the desired density, well-ordered positions, and size tunable from the nanometer to the micrometer scale, thus providing a template for the manageable and durable mechanical and electronic structuring of two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Measurement of Folding Angle and Strain Vector in Atomically thin WS$_2$ using Second Harmonic Generation

Structural engineering techniques such as local strain engineering and folding provide functional control over critical optoelectronic properties of 2D materials. Accurate monitoring of local strain vector (both strain amplitude and direction) and folding angle in 2D materials is important to optimize the device performance. Conventionally, the accurate measurement of both strain amplitude and direction requires the combined usage of multiple tools, such as atomic force microscopy (AFM), electron microscopy, Raman spectroscopy, etc. Here, we demonstrated the usage of a single tool, polarization-dependent second harmonic generation (SHG) imaging, to determine the folding angle and strain vector accurately in atomically thin tungsten disulfide (WS2). We find that trilayer WS2 folds with folding angle of 600 show 9 times SHG enhancement due to vector superposition of SH wave vectors coming from the individual folding layers. Strain dependent SHG quenching and enhancement is found parallel and perpendicular respectively to the direction of the compressive strain vector. However, despite a variation in strain angle, the total SHG remains constant which allows us to determine the local strain vector accurately using photoelastic approach. We also demonstrate that band-nesting induced transition (C peak) can highly enhance SHG, which can be significantly modulated by strain. Our results would pave the way to enable novel applications of the TMDs in nonlinear optical device.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Engineered creation of periodic giant, non-uniform strains in MoS2 monolayers

The realization of ordered strain fields in two-dimensional crystals is an intriguing perspective in many respects, including the instauration of novel transport regimes and the achievement of enhanced device performances. In this work, we demonstrate the possibility to subject micrometric regions of atomically-thin molybdenum disulphide (MoS2) to giant strains with the desired ordering. Mechanically-deformed MoS2 membranes can be obtained by proton-irradiation of bulk flakes, leading to the formation of monolayer domes containing pressurized hydrogen. By pre-patterning the flakes via deposition of polymeric masks and electron beam lithography, we show that it is possible not only to control the size and position of the domes, but also to create a mechanical constraint. Atomic force microscopy measurements reveal that this constraint alters remarkably the morphology of the domes, otherwise subject to universal scaling laws. Upon the optimization of the irradiation and patterning processes, unprecedented periodic configurations of large strain gradients -- estimated by numerical simulations -- are created, with the highest strains being close to the rupture critical values (> 10 %). The creation of such high strains is confirmed by Raman experiments. The method proposed here represents an important step towards the strain engineering of two-dimensional crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Super-transport of Excitons in Atomically Thin Organic Semiconductors at the 2D Quantum Limit

Long-range and fast transport of coherent excitons is important for development of high-speed excitonic circuits and quantum computing applications. However, most of these coherent excitons have only been observed in some low-dimensional semiconductors when coupled with cavities, as there are large inhomogeneous broadening and dephasing effects on the exciton transport in their native states of the materials. Here, by confining coherent excitons at the 2D quantum limit, we firstly observed molecular aggregation enabled super-transport of excitons in atomically thin two-dimensional (2D) organic semiconductors between coherent states, with a measured a high effective exciton diffusion coefficient of 346.9 cm2/sec at room temperature. This value is one to several orders of magnitude higher than the reported values from other organic molecular aggregates and low-dimensional inorganic materials. Without coupling to any optical cavities, the monolayer pentacene sample, a very clean 2D quantum system (1.2 nm thick) with high crystallinity (J type aggregation) and minimal interfacial states, showed superradiant emissions from the Frenkel excitons, which was experimentally confirmed by the temperature-dependent photoluminescence (PL) emission, highly enhanced radiative decay rate, significantly narrowed PL peak width and strongly directional in-plane emission. The coherence in monolayer pentacene samples was observed to be delocalized over 135 molecules, which is significantly larger than the values (a few molecules) observed from other organic thin films. In addition, the super-transport of excitons in monolayer pentacene samples showed highly anisotropic behaviour. Our results pave the way for the development of future high-speed excitonic circuits, fast OLEDs, and other opto-electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable Optoelectronic Properties of WS$_2$ by Local Strain Engineering and Folding

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because they have high flexibility and they can withstand high deformations before rupture. Local strain engineering in 2D TMDs is achieved via strained wrinkles. Wrinkles on thick layers of TMDs are reported to show interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDs have not been investigated because they can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkles and folds simultaneously in 1-3L WS2 using a new fabrication technique. A layer dependent reduction in surface potential is found for both folded layers and perfect pack layers due to the dominant interlayer screening effect. Strain dependent modulation in semi conductive junction properties is observed for strain induced wrinkles through current scanning. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. Upon illumination, SBH reduces significantly due to photo-generated carriers. Our results present an important advance towards controlling the optoelectronic properties of atomically thin WS2 via strain engineering, with applications in optoelectronics, quantum optics and nanophotonics device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga$_2$O$_3$ glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga$_2$O$_3$ capping of commercial grade WS$_2$ monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga$_2$O$_3$ highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures.

0 citations0 reviewsNo code linkedOpen access