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Yuegang Zhang

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Published work

5 published item(s)

preprint2026arXiv

Universal and Experiment-calibrated Prediction of XANES through Crystal Graph Neural Network and Transfer Learning Strategy

Theoretical simulation is helpful for accurate interpretation of experimental X-ray absorption near-edge structure (XANES) spectra that contain rich atomic and electronic structure information of materials. However, current simulation methods are usually too complex to give the needed accuracy and timeliness when a large amount of data need to be analyzed, such as for in-situ characterization of battery materials. To address these problems, artificial intelligence (AI) models have been developed for XANES prediction. However, instead of using experimental XANES data, the existing models are trained using simulated data, resulting in significant discrepancies between the predicted and experimental spectra. Also, the universality across different elements has not been well studied for such models. In this work, we firstly establish a crystal graph neural network, pre-trained on simulated XANES data covering 48 elements, to achieve universal XANES prediction with a low average relative square error of 0.020223; and then utilize transfer learning to calibrate the model using a small experimental XANES dataset. After calibration, the edge energy misalignment error of the predicted S, Ti and Fe K edge XANES is significantly reduced by about 80%. The method demonstrated in this work opens up a new way to achieve fast, universal, and experiment-calibrated XANES prediction.

preprint2013arXiv

Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications

Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and yield perspective, these variabilities cause fluctuations in the device performance, which should be minimized via device engineering. From the metrology perspective, however, the variability effects can function as novel probing mechanisms, in which the 'signal fluctuations' can be useful for potential sensing applications. This paper presents an overview of the variability effects in graphene, with emphasis on their challenges and opportunities for device engineering and applications. The discussion can extend to other thin-film, nanowire and nanotube devices with similar variability issues, forming general interest in evaluating the promise of emerging technologies.

preprint2012arXiv

Fermi velocity engineering in graphene by substrate modification

The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering Fermi velocity. Indeed, several efforts have succeeded in modifying Fermi velocity by varying charge carrier concentration. Here we present a powerful but simple new way to engineer Fermi velocity while holding the charge carrier concentration constant. We find that when the environment embedding graphene is modified, the Fermi velocity of graphene is (i) inversely proportional to its dielectric constant, reaching ~2.5$\times10^6$ m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.

preprint2010arXiv

Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.

preprint2010arXiv

Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.