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Yuchen Du

Yuchen Du appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciastro-ph.HEgr-qchep-th

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Published work

19 published item(s)

preprint2020arXiv

Probing Compactified Extra Dimensions with Gravitational Waves

We study the effect of compact extra dimensions on the gravitational wave luminosity and waveform. We consider a toy model, with a compactified fifth dimension, and matter confined on a brane. We work in the context of five dimensional ($5d$) general relativity, though we do make connections with the corresponding Kaluza-Klein effective $4d$ theory. We show that the luminosity of gravitational waves emitted in $5d$ gravity by a binary with the same characteristics (same masses and separation distance) as a $4d$ binary is 20.8\% less relative to the $4d$ case, to leading post-Newtonian order. The phase of the gravitational waveform differs by 26\% relative to the $4d$ case, to leading post-Newtonian order. Such a correction arises mainly due to the coupling between matter and dilaton field in the effective $4d$ picture and agrees with previous calculations when we set black holes' scalar charges to be those computed from the Kaluza-Klein reduction. The above corrections to the waveform and the luminosity are inconsistent with the gravitational-wave and binary pulsar observations and thus they effectively rule out the possibility of such a simple compactified higher dimensions scenario. We also comment on how our results change if there are several compactified extra dimensions, and show that the discrepancy with $4d$ general relativity only increases.

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preprint2016arXiv

Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio

The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and expand laterally when compressed. A negative Poisson's ratio is theoretically permissible but has not, with few exceptions of man-made bulk structures, been experimentally observed in any natural materials. Here, we show that the negative Poisson's ratio exists in the low-dimensional natural material black phosphorus, and that our experimental observations are consistent with first principles simulations. Through application of uniaxial strain along zigzag and armchair directions, we find that both interlayer and intralayer negative Poisson's ratios can be obtained in black phosphorus. The phenomenon originates from the puckered structure of its in-plane lattice, together with coupled hinge-like bonding configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors

Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which is consistent with the lack of hysteresis, carrier freeze-out or persistent photoconductivity in DC characteristics. These results confirm that the phosphorene MOSFET can be a viable microwave transistor for both small-signal and large-signal applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5

Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is that it is a 3D Dirac semimetal which has linear energy dispersion in all three dimensions in momentum space. Structure-wise, ZrTe5 is a layered material held together by weak interlayer van der Waals force. The combination of its unique band structure and 2D atomic structure provides a fertile ground for more potential exotic physical phenomena in ZrTe5 related to 3D Dirac semimentals. However the physical properties of its few-layer form have yet to be thoroughly explored. Here we report strong optical and electrical in-plane anisotropy of mechanically exfoliated few-layer ZrTe5. Raman spectroscopy shows significant intensity change with sample orientations, and the behavior of angle-resolved phonon modes at the gamma point is explained by theoretical calculation. DC conductance measurement indicates a 50% of difference along different in-plane directions. The diminishing of resistivity anomaly in few-layer samples indicates the evolution of band structure with reduced thickness. Low-temperature Hall experiment sheds lights on more intrinsic anisotropic electrical transport, with hole mobility of 3,000 and 1,500 cm2/Vs along a-axis and c-axis respectively. Pronounced quantum oscillations in magneto-resistance are observed at low temperatures with highest electron mobility up to 44,000 cm2/Vs.

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preprint2016arXiv

Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping

In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported levels. By applying 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), low ON-state resistance of 3.2 ohm.mm and high field-effect mobility of 229 cm2/Vs are achieved with a record high drain current of 532 mA/mm at a moderate channel length of 1.5 μm.

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preprint2016arXiv

Weak Localization in Few-Layer Black Phosphorus

We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ~T^-0.51+-0.05 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time τ, which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.

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preprint2015arXiv

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ~20 and ~40 W m$^{-1}$ K$^{-1}$ for black phosphorus films thicker than 15 nm, respectively, and decrease to ~10 and ~20 W m$^{-1}$ K$^{-1}$ as the film thickness is reduced, exhibiting significant anisotropy. The thermal conductivity anisotropic ratio is found to be ~2 for thick black phosphorus films and drops to ~1.5 for the thinnest 9.5-nm-thick film. Theoretical modeling reveals that the observed anisotropy is primarily related to the anisotropic phonon dispersion, whereas the intrinsic phonon scattering rates are found to be similar along the armchair and zigzag directions. Surface scattering in the black phosphorus films is shown to strongly suppress the contribution of long-mean-free-path acoustic phonons.

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preprint2014arXiv

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors

Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMD) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs) have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions.

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preprint2014arXiv

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs) such as MoS2 where Fermi-level is strongly pinned near conduction band edge at metal/MoS2 interface. The nature of BP transistors are Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versus by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an active n-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x lower than the control sample without doping. The corresponding specific contact resistivity (pc) is found to decrease by two orders of magnitude. With such low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a drain current (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best value reported so far on MoS2 FETs.

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preprint2014arXiv

Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors, and its potential applications in layer-structured semiconducting 2D crystals.

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preprint2014arXiv

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.

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preprint2014arXiv

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications

Phosphorus is one of the most abundant elements preserved in earth, constructing with a fraction of ~0.1% of the earth crust. In general, phosphorus has several allotropes. The two most commonly seen allotropes, white and red phosphorus, are widely used in explosives and safety matches. In addition, black phosphorus, though rarely mentioned, is a layered semiconductor and have great potentials in optical and electronic applications. Remarkably, this layered material can be reduced to one single atomic layer in the vertical direction owing to the van der Waals structure, known as phosphorene, where the physical properties can be tremendously different from its bulk counterpart. In this review article, we trace back to the 100 years research history on black phosphorus from the synthesis to material properties, and extend the topic from black phosphorus to phosphorene. The physical and transport properties are highlighted, aiming at further applications in electronic and optoelectronics devices.

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preprint2014arXiv

Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the reduction of trapped charge in Al2O3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between -50°C and 150°C up to at least 1000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the frequency and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.

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preprint2014arXiv

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high on-current of 144 mA/mm and hole mobility of 95.6 cm2/Vs. We deposit Al2O3 by atomic layer deposition (ALD) and study the effects of dielectric capping. We observe that the polarity of the transistors alternated from p-type to ambipolar with Al2O3 grown on the top. We attribute this transition to the changes for the effective Schottky barrier heights for both electrons and holes at the metal contact edges, which is originated from fixed charges in the ALD dielectric.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density

We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. In addition to strong spin-orbit coupling, a material must also support large charge currents to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7$\times$10$^7$ A/cm$^2$. This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.

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preprint2013arXiv

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.

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preprint2013arXiv

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.

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