Researcher profile

Yuan Dai

Yuan Dai contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

SANTA: Self-Aligned Nanotrench Ablation via Joule Heating for Probing Sub-20 nm Devices

Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigate how the Joule power, ambient temperature, PMMA thickness, and substrate properties can improve the spatial resolution of this technique. We achieve sub-20 nm nanotrenches for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrate a functioning nanoscale resistive memory (RRAM) bit self-aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps.

preprint2015arXiv

Nanoscale Phase Change Memory with Graphene Ribbon Electrodes

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene "edge" contacts enable switching with threshold voltages as low as ~3 V, low programming currents (<1 μA SET, <10 μA RESET) and ON/OFF ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices.