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Yu. V. Kapitonov

Yu. V. Kapitonov contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2020arXiv

Amplified Spontaneous Emission and Random Lasing in MAPbBr$_3$ Halide Perovskite Single Crystals

Halide perovskites are a promising optical gain media with high tunability and simple solution synthesis. In this study, two gain regimes, namely amplified spontaneous emission and random lasing, are demonstrated in same MAPbBr$_3$ halide perovskite single crystal. For this, photoluminescence is measured at a temperature of 4 K with pulsed femtosecond pumping by UV light with a 80 MHz repetition rate. Random lasing is observed in areas of the sample where a random resonator was formed due to cracks and crystal imperfections. In more homogeneous regions of the sample, the dominant regime is amplified spontaneous emission. These two regimes are reliably distinguished by the line width, the mode structure, the growth of the intensity after the threshold, and the degree of polarization of the radiation. The spectral localization of the stimulated emission well below the bound exciton resonance raises a question concerning the origin of the emission in halide perovskite lasers.

preprint2020arXiv

Defect-related states in MAPbI$_3$ halide perovskite single crystals revealed by the photoluminescence excitation spectroscopy

The MAPbI$_3$ halide perovskite single crystals are studied at 5 K temperature using the photoluminescence excitation spectroscopy. Two non-interacting types of states are determined: bound excitons and defect-related states. Excitation of the crystal with light energy below the bound exciton resonance reveals the complex low-density defects emission, otherwise hidden by the emission of bound excitons. A way to separate these defect-related luminescence spectra is proposed, and the thorough study of this emission regime is carried out. The results of this study opens an area of low-density defects and dopants exploration in halide perovskite semiconductors.

preprint2016arXiv

Photon echo transients from an inhomogeneous ensemble of semiconductor quantum dots

An ensemble of quantum dot excitons may be used for coherent information manipulation. Due to the ensemble inhomogeneity any optical information retrieval occurs in form of a photon echo. We show that the inhomogeneity can lead to a significant deviation from the conventional echo timing sequence. Variation of the area of the initial rotation pulse, which generates excitons in a dot sub-ensemble only, reveals this complex picture of photon echo formation. We observe a retarded echo for π/2 pulses, while for 3π/2 the echo is advanced in time as evidenced through monitoring the Rabi oscillations in the time-resolved photon echo amplitude from (In,Ga)As/GaAs self-assembled quantum dot structures and confirmed by detailed calculations.

preprint2014arXiv

Anti-mirror reflection of a bounded plane optical waveguide: string model

The effect of anti-mirror reflection from a bounded plane optical waveguide used earlier for observation of slow light in a Bragg waveguide is considered. A theory of the effect is proposed that allowed us to interpret the observed spectral (Gaussian lineshape) and angular (Lorentzian angular profile) properties of the light scattered by the bounded waveguide in the anti-specular direction.

preprint2014arXiv

Effect of irradiation by He+ and Ga+ ions on 2D-exciton susceptibility of the InGaAs/GaAs quantum-well structures

The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relatively small doses) on the excitonic reflectivity spectra of single InGaAs/GaAs quantum-well structures is studied. It is found that the irradiation results in decreasing intensity and broadening of the excitonic resonances in the reflectivity spectra for all the doses. It is shown that these changes are not related to a decrease of the exciton transition oscillator strength and, therefore, to the irradiation-induced destruction of the excitonic states, but can be rather ascribed to a common cause, namely, to inhomogeneous broadening of the excitonic resonances proportional to the exposure dose.A tentative model of the irradiation-induced broadening is considered, with the mechanism of the process being a consequence of scat-tering of the 2D excitons by structural defects associated with Ga(In) and As vacancies arising upon collisions of the high-energy ions with regular atoms of the crystal structure. The model is used to compare experimental dependence of efficiency of the Ga+-ion-induced broad-ening on distance of the quantum well from the irradiated surface with a similar dependence calculated using the Monte-Carlo technique. A discrepancy between the results of simulation and experimental data is discussed.

preprint2010arXiv

Bragg Reflection Waveguide: Anti-Mirror Reflection and Light Slowdown

The effect of the light group velocity reduction in dielectric Bragg reflection waveguide structures (SiO$_2$/TiO$_2$) in the vicinity of the cutoff frequency is studied experimentally. The effect of anti-mirror reflection, specific for the Bragg reflection waveguides, is described and employed for detection of "slow light". The experiments were performed with the use of the Ti:sapphire laser pulses ~ 100 fs in length. The group index $n_g \sim$ 30 with a fractional pulse delay (normalized to the pulse width) of $\sim$ 10 is demonstrated. The problems and prospects of implementation of the slow-light devices based on the Bragg reflection waveguide structures are discussed.