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Yu-ichiro Matsushita

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cond-mat.mtrl-sci cond-mat.str-el quant-ph

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preprint2022arXiv

Probabilistic imaginary-time evolution by using forward and backward real-time evolution with a single ancilla: first-quantized eigensolver of quantum chemistry for ground states

Imaginary-time evolution (ITE) on a quantum computer is a promising formalism for obtaining the ground state of a quantum system. As a kind of it, the probabilistic ITE (PITE) takes advantage of measurements to implement the nonunitary operations. We propose a new approach of PITE which requires only a single ancillary qubit. Under a practical approximation, the circuit is constructed from the forward and backward real-time evolution (RTE) gates as black boxes, generated by the original many-qubit Hamiltonian. All the efficient unitary quantum algorithms for RTE proposed so far and those in the future can thus be transferred to ITE exactly as they are. Our approach can also be used for obtaining the Gibbs state at a finite temperature and the partition function. We apply the approach to several systems as illustrative examples to see its validity. We also discuss the application of our approach to quantum chemistry by focusing on the scaling of computational cost, leading to a novel framework denoted by first-quantized quantum eigensolver.

preprint2020arXiv

Charge and spin response functions on a quantum computer: applications to molecules

We propose a scheme for the construction of charge and spin linear-response functions of an interacting electronic system via quantum phase estimation and statistical sampling on a quantum computer. By using the unitary decomposition of electronic operators for avoiding the difficulty due to their non-unitarity, we provide the circuits equipped with ancillae for probabilistic preparation of qubit states on which the necessary non-unitary operators have acted. We perform simulations of such construction of the response functions for C2 and N2 molecules by comparing with the accurate ones based on the full configuration interaction calculations. It is found that the accurate detection of subtle structures coming from the weak poles in the response functions requires a large number of measurements.

preprint2020arXiv

Construction of Green's functions on a quantum computer: applications to molecular systems

We propose a scheme for the construction of one-particle Green's function (GF) of an interacting electronic system via statistical sampling on a quantum computer. Although the non-unitarity of creation and annihilation operators for the electronic spin orbitals prevents us from preparing specific states selectively, probabilistic state preparation is demonstrated to be possible for the qubits. We provide quantum circuits equipped with at most two ancillary qubits for obtaining all the components of GF. We perform simulations of such construction of GFs for LiH and H$_2$O molecules based on the unitary coupled-cluster (UCC) method to demonstrate the validity of our scheme by comparing the spectra exact within UCC and those from full configuration interaction calculations. We also examine the accuracy of sampling method by exploiting the Galitskii--Migdal formula, which gives the total energy only from the GF.

preprint2016arXiv

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

We have performed electronic state calculations to clarify the initial stage of the oxidation of the Si- and C-faces in 4H-SiC based on the density-functional theory. We investigate how each Si and C atomic site is oxidized on C- and Si-face, and explore most probable reaction pathways, corresponding energy barriers, and possible defects generated during the oxidation. We have found that carbon annihilation process is different between on Si- and on C-face, and this difference causes different defects in interface; In C-face case, (1), carbon atoms are dissociated directly from the substrate as CO molecules. (2), after CO dissociation, 3-fold coordinated oxygen atoms (called Y-lid) are observed at the interface. (3), high density of C-dangling bonds can remain at the interface. In Si-face case, (1), C atoms inevitably form carbon nano clusters (composed of a few atoms) in interface to reduce the number of dangling bonds there. Moreover, we have found that the carbon nano clusters are composed of not only single but also double chemical bonds. (2), We have observed that CO molecules are dissociated from the carbon nano clusters in MD simulations. Furthermore, we have investigated whether H$_2$ and NO molecules react with the defects found in this study.

preprint2015arXiv

L1$_0$ stacked binaries as candidates for hard magnets: FePt, MnAl and MnGa

A novel strategy of stacking binary magnets to enhance the magneto crystalline anisotropy is explored. This strategy is used in the search for hard magnets by studying FePt/MnGa and FePt/MnAl stacks. The choice of these binaries is motivated by the fact that they already possess large magneto crystalline anisotropy. Several possible alternative structures for these materials are explored in order to reduce the amount of Pt owing to its high cost.

preprint2014arXiv

Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors

We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective masses in various polytypes of SiC. We find that the channel length, rather than the hexagonality prevailed in the past, is the decisive factor for the band-gap variation in the polytypes. We also find that the floating nature causes two-dimensional electron and hole systems at the interface of different SiC polytypes and even one-dimensional channels near the inclined SiC surface.

preprint2011arXiv

Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators

We present a systematic study that clarifies validity and limitation of current hybrid functionals in density functional theory for structural and electronic properties of various semiconductors and insulators. The three hybrid functionals, PBE0 by Perdew, Ernzerhof, and Becke, HSE by Heyd, Sucseria, and Ernzerhof, and a long-range corrected (LC) functional, are implemented in a well-established plane-wave-basis-set scheme combined with norm-conserving pseudopotentials, thus enabling us to assess applicability of each functional on equal footing to the properties of the materials. The materials we have examined in this paper range from covalent to ionic materials as well as a rare-gas solid whose energy gaps determined by experiments are in the range of 0.6 eV - 14.2 eV: i.e., Ge, Si, BaTiO$_3$, $β$-GaN, diamond, MgO, NaCl, LiCl, Kr, and LiF. We find that the calculated bulk moduli by the hybrid functionals show better agreement with the experiments than the generalized gradient approximation (GGA) provides, whereas the calculated lattice constants by the hybrid functionals and GGA show comparable accuracy. The calculated energy band gaps and the valence-band widths for the ten prototype materials show substantial improvement using the hybrid functional compared with GGA. In particular, it is found that the band gaps of the ionic materials as well as the rare-gas solid are well reproduced by the LC-hybrid functional, whereas those of covalent materials are well described by the HSE functional. We also examine exchange effects due to short-range and long-range components of the Coulomb interaction and propose an optimum recipe to the short-range and long-range separation in treating the exchange energy.