Source author record

Yu. G. Selivanov

Yu. G. Selivanov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2022arXiv

Anomalous behavior of the $E_u^1$ infrared-active phonon mode in a Bi$_{2-x}$Sr$_x$Se$_3$ crystal

We have studied spectral evolution of the $E_u^1$ phonon line of a topological insulator Bi$_{2-x}$Sr$_x$Se$_3$ with temperature. Unlike the Raman-active phonons, the $E_u^1$ mode demonstrates softening upon cooling the crystal, and the corresponding spectral line acquires a pronounced Fano-like shape at temperatures $T\lesssim100$ K. We interpret the latter effect as a signature of specific coupling of the bulk infrared active phonons to surface Dirac electrons. Using coherent resonant excitation of the $E_u^1$ mode as a surface sensitive tool, we have detected softening of the surface counterpart of the bulk $E_u^1$ phonon mode upon strontium doping. This observation can be an evidence of enhanced electron-phonon interaction at the surface of the Bi$_{2-x}$Sr$_x$Se$_3$ crystal.

preprint2016arXiv

Low temperature Hall effect in bismuth chalcogenides thin films

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.