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Youdi Kuang

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity $κ_{L}$ is 40-60% lower than the in-plane values. Extremely low $κ_{L}$ is found for both materials because of high anharmonicity. It is suggested that nanostructuring would be difficult to further decrease $κ_{L}$ because of the short mean free paths of dominant phonon modes (1-30 nm at 300 K) while alloying would be efficient in reducing $κ_{L}$ considering that the relative $κ_{L}$ contribution ( $\sim$ 65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the $a$ , $b$ and $c$ axes. This leads to the highest optimal $ZT$ values along the $b$ axis and lowest ones along the $a$ axis in both $p$ -type materials. However, the $n$ -type ones exhibit the highest $ZT$ s along the $a$ axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary band valley that causes significant increase in electron mobility and density of states. SnSe exhibits larger optimal $ZT$ s compared with SnS in both $p$ -type and $n$ -type materials. For both materials, the peak $ZT$ s of $n$ -type materials are much higher than those of $p$ -type ones along the same direction. The predicted highest $ZT$ values at 750 K are 1.0 in SnSe and 0.6 in SnS along the $b$ axis for the $p$ -type doping while those for the $n$ -type doping reach 2.7 in SnSe and 1.5 in SnS along the $a$ axis, rendering them among the best bulk thermoelectric materials for large-scale applications.

preprint2015arXiv

Tensile Strains Give Rise to Strong Size Effects for Thermal Conductivities of Silicene, Germanene and Stanene

Based on first principles calculations and self-consistent solution of linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of freestanding silicene, germanene and stanene under different isotropic tensile strains and temperatures. We find a strong size dependence of k for silicene with tensile strain, i.e., divergent k with increasing system size, in contrast, the intrinsic room temperature k for unstrained silicene converges with system size to 19.34 W/m-K by 178 nm. The room temperature k of strained silicene becomes as large as that of bulk silicon by 84 um, indicating the possibility of using strain in silicene to manipulate k for thermal management. The relative contribution to the intrinsic k from out-of-plane acoustic modes is largest for unstrained silicene, about 39% at room temperature. The single mode relaxation time approximation, which works reasonably well for bulk silicon, fails to appropriately describe phonon thermal transport in silicene, germanene and stanene within the temperature range considered. For large samples of silicene, k increases with tensile strain, peaks at about 7% strain and then decreases with further strain. In germanene and stanene increasing strain hardens and stabilizes long wavelength out-of-plane acoustic phonons, and leads to similar k behaviors to those of silicene. These findings further our understanding of phonon dynamics in group-IV buckled monolayers and may guide transfer and fabrication techniques of these freestanding samples and engineering k by size and strain for applications of thermal management and thermoelectricity.

preprint2015arXiv

Thermal conductivity of graphene mediated by strain and size

Based on first-principles calculations and full iterative solution of the linearized Boltzmann-Peierls transport equation for phonons within three-phonon scattering framework, we characterize the lattice thermal conductivities $κ$ of strained and unstrained graphene. We find $κ$ converges to 5450 W/m-K for infinite unstrained graphene, while $κ$ diverges for strained graphene with increasing system size at room temperature. The different $κ$ behaviors for these systems are further validated mathematically through phonon lifetime analysis. Flexural acoustic phonons are the dominant heat carriers in both unstrained and strained graphene within the temperature considered. Ultralong mean free paths of flexural phonons contribute to finite size effects on $κ$ for samples as large as 8 cm at room temperature. The calculated size-dependent and temperature-dependent $κ$ for finite samples agree well with experimental data, demonstrating the ability of the present approach to predict $κ$ of larger graphene sample. Tensile strain hardens the flexural modes and increases their lifetimes, causing interesting dependence of $κ$ on sample size and strain due to the competition between boundary scattering and intrinsic phonon-phonon scattering. These findings shed light on the nature of thermal transport in two-dimensional materials and may guide predicting and engineering $κ$ of graphene by varying strain and size.

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Youdi Kuang

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3 publications

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Tensile Strains Give Rise to Strong Size Effects for Thermal Conductivities of Silicene, Germanene and Stanene

Thermal conductivity of graphene mediated by strain and size

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