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Ruiqiang Guo

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cond-mat.mtrl-sci cond-mat.mes-hall physics.comp-ph

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preprint2022arXiv

Machine Learning Interatomic Potential for Anisotropic Thermal Transport in Bulk Hexagonal Boron Nitride

The highly anisotropic thermal conductivity in layered materials is crucial for a broad range of applications such as thermal management of electronic devices, thermal insulation, and thermoelectrics. Understanding of anisotropic thermal transport in layered materials largely depends on atomistic simulations based on density functional theory (DFT) or empirical potentials, which however suffer either low computational efficiency or accuracy. Recently, machine learning interatomic potentials (MLIPs) are emerging as a powerful tool to bridge the gap. Despite the recent progress in developing MLIPs, little attention has been paid to constructing a potential that can accurately predict the thermal properties of layered materials, which is more challenging compared with the case of isotropic materials because of the highly anisotropic bonding and weak van der Waals interactions in layered materials. Here, we introduce a MLIP within the Gaussian approximation potential (GAP) framework for bulk hexagonal boron nitride (h-BN) with a typical layered structure. The GAP can well predict the highly anisotropic phonon transport properties and thermal conductivity of bulk h-BN with DFT-level accuracy at orders of magnitude reduced cost. Our work demonstrates the ability of GAP to reproduce the subtle features of anisotropic potential energy surfaces of bulk h-BN and potentially other layered materials. Atomistic simulations based on MLIPs are expected to be able to greatly promote the understanding of phonon transport and the prediction of thermophysical properties in layered materials.

preprint2020arXiv

Mie Scattering of Phonons by Point Defects in IV-VI Semiconductors PbTe and GeTe

Point defects in solids such as vacancy and dopants often cause large thermal resistance. Because the lattice site occupied by a point defect has a much smaller size than phonon wavelengths, the scattering of thermal acoustic phonons by point defects in solids has been widely assumed to be the Rayleigh scattering type. In contrast to this conventional perception, using an ab initio Green's function approach, we show that the scattering by point defects in PbTe and GeTe exhibits Mie scattering characterized by a weaker frequency dependence of the scattering rates and highly asymmetric scattering phase functions. These unusual behaviors occur because the strain field induced by a point defect can extend for a long distance much larger than the lattice spacing. Because of the asymmetric scattering phase functions, the widely used relaxation time approximation fails with an error of ~20% at 300K in predicting lattice thermal conductivity when the vacancy fraction is 1%. Our results show that the phonon scattering by point defects in IV-VI semiconductors cannot be described by the simple kinetic theory combined with Rayleigh scattering.

preprint2015arXiv

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity $κ_{L}$ is 40-60% lower than the in-plane values. Extremely low $κ_{L}$ is found for both materials because of high anharmonicity. It is suggested that nanostructuring would be difficult to further decrease $κ_{L}$ because of the short mean free paths of dominant phonon modes (1-30 nm at 300 K) while alloying would be efficient in reducing $κ_{L}$ considering that the relative $κ_{L}$ contribution ($\sim$ 65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the $a$, $b$ and $c$ axes. This leads to the highest optimal $ZT$ values along the $b$ axis and lowest ones along the $a$ axis in both $p$-type materials. However, the $n$-type ones exhibit the highest $ZT$s along the $a$ axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary band valley that causes significant increase in electron mobility and density of states. SnSe exhibits larger optimal $ZT$s compared with SnS in both $p$-type and $n$-type materials. For both materials, the peak $ZT$s of $n$-type materials are much higher than those of $p$-type ones along the same direction. The predicted highest $ZT$ values at 750 K are 1.0 in SnSe and 0.6 in SnS along the $b$ axis for the $p$-type doping while those for the $n$-type doping reach 2.7 in SnSe and 1.5 in SnS along the $a$ axis, rendering them among the best bulk thermoelectric materials for large-scale applications.

preprint2015arXiv

Thermal conductivity of graphene mediated by strain and size

Based on first-principles calculations and full iterative solution of the linearized Boltzmann-Peierls transport equation for phonons within three-phonon scattering framework, we characterize the lattice thermal conductivities $κ$ of strained and unstrained graphene. We find $κ$ converges to 5450 W/m-K for infinite unstrained graphene, while $κ$ diverges for strained graphene with increasing system size at room temperature. The different $κ$ behaviors for these systems are further validated mathematically through phonon lifetime analysis. Flexural acoustic phonons are the dominant heat carriers in both unstrained and strained graphene within the temperature considered. Ultralong mean free paths of flexural phonons contribute to finite size effects on $κ$ for samples as large as 8 cm at room temperature. The calculated size-dependent and temperature-dependent $κ$ for finite samples agree well with experimental data, demonstrating the ability of the present approach to predict $κ$ of larger graphene sample. Tensile strain hardens the flexural modes and increases their lifetimes, causing interesting dependence of $κ$ on sample size and strain due to the competition between boundary scattering and intrinsic phonon-phonon scattering. These findings shed light on the nature of thermal transport in two-dimensional materials and may guide predicting and engineering $κ$ of graphene by varying strain and size.

preprint2014arXiv

Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries

Boron-doped polycrystalline silicon-germanium (SiGe) thin films are grown by low-pressure chemical vapor deposition (LPCVD) and their thermoelectric properties are characterized from 120 K to 300 K for the potential applications in integrated microscale cooling. The naturally formed grain boundaries are found to play a crucial role in determining both the charge and thermal transport properties of the films. Particularly, the unique columnar grain structures result in remarkable thermal conductivity anisotropy with the in-plane thermal conductivities of SiGe films about 50% lower than the cross-plane values. By optimizing the growth conditions and doping level, a high figure of merit (ZT) of 0.2 for SiGe films is achieved at 300 K, which is about 100% higher than the previous record for p-type SiGe alloys, mainly due to the significant reduction in the in-plane thermal conductivity caused by nanograin boundaries. The low cost and excellent scalability of LPCVD render these high-performance SiGe films ideal candidates for thin-film thermoelectric applications.