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Ruiqiang Guo

Ruiqiang Guo contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Machine Learning Interatomic Potential for Anisotropic Thermal Transport in Bulk Hexagonal Boron Nitride

The highly anisotropic thermal conductivity in layered materials is crucial for a broad range of applications such as thermal management of electronic devices, thermal insulation, and thermoelectrics. Understanding of anisotropic thermal transport in layered materials largely depends on atomistic simulations based on density functional theory (DFT) or empirical potentials, which however suffer either low computational efficiency or accuracy. Recently, machine learning interatomic potentials (MLIPs) are emerging as a powerful tool to bridge the gap. Despite the recent progress in developing MLIPs, little attention has been paid to constructing a potential that can accurately predict the thermal properties of layered materials, which is more challenging compared with the case of isotropic materials because of the highly anisotropic bonding and weak van der Waals interactions in layered materials. Here, we introduce a MLIP within the Gaussian approximation potential (GAP) framework for bulk hexagonal boron nitride (h-BN) with a typical layered structure. The GAP can well predict the highly anisotropic phonon transport properties and thermal conductivity of bulk h-BN with DFT-level accuracy at orders of magnitude reduced cost. Our work demonstrates the ability of GAP to reproduce the subtle features of anisotropic potential energy surfaces of bulk h-BN and potentially other layered materials. Atomistic simulations based on MLIPs are expected to be able to greatly promote the understanding of phonon transport and the prediction of thermophysical properties in layered materials.

preprint2020arXiv

Mie Scattering of Phonons by Point Defects in IV-VI Semiconductors PbTe and GeTe

Point defects in solids such as vacancy and dopants often cause large thermal resistance. Because the lattice site occupied by a point defect has a much smaller size than phonon wavelengths, the scattering of thermal acoustic phonons by point defects in solids has been widely assumed to be the Rayleigh scattering type. In contrast to this conventional perception, using an ab initio Green's function approach, we show that the scattering by point defects in PbTe and GeTe exhibits Mie scattering characterized by a weaker frequency dependence of the scattering rates and highly asymmetric scattering phase functions. These unusual behaviors occur because the strain field induced by a point defect can extend for a long distance much larger than the lattice spacing. Because of the asymmetric scattering phase functions, the widely used relaxation time approximation fails with an error of ~20% at 300K in predicting lattice thermal conductivity when the vacancy fraction is 1%. Our results show that the phonon scattering by point defects in IV-VI semiconductors cannot be described by the simple kinetic theory combined with Rayleigh scattering.