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Yoshinori Sueno

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preprint2022arXiv

Characterization of two-level system noise for microwave kinetic inductance detector comprising niobium film on silicon substrate

A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector. It comprises a resonator circuit constructed with a superconducting film on a dielectric substrate. To expand its field of application, it is important to establish a method to suppress the two-level system (TLS) noise that is caused by the electric fluctuations between the two energy states at the surface of the substrate. The electric field density can be decreased by expanding the strip width (S) and gap width from the ground plane (W) in the MKID circuit, allowing the suppression of TLS noise. However, this effect has not yet been confirmed for MKIDs made with niobium films on silicon substrates. In this study, we demonstrate its effectiveness for such MKIDs. We expanded the dimension of the circuit from (S, W) = (3.00 $μ$m, 4.00 $μ$m) to (S, W) = (5.00 $μ$m, 23.7 $μ$m), and achieved an increased suppression of 5.5 dB in TLS noise.

preprint2020arXiv

A method to measure superconducting transition temperature of microwave kinetic inductance detector by changing power of readout microwaves

A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector, and its principle is based on a superconducting resonator circuit. The superconducting transition temperature (Tc) of the MKID is an important parameter because various MKID characterization parameters depend on it. In this paper, we propose a method to measure the Tc of the MKID by changing the applied power of the readout microwaves. A small fraction of the readout power is deposited in the MKID, and the number of quasiparticles in the MKID increases with this power. Furthermore, the quasiparticle lifetime decreases with the number of quasiparticles. Therefore, we can measure the relation between the quasiparticle lifetime and the detector response by rapidly varying the readout power. From this relation, we estimate the intrinsic quasiparticle lifetime. This lifetime is theoretically modeled by Tc, the physical temperature of the MKID device, and other known parameters. We obtain Tc by comparing the measured lifetime with that acquired using the theoretical model. Using an MKID fabricated with aluminum, we demonstrate this method at a 0.3 K operation. The results are consistent with those obtained by Tc measured by monitoring the transmittance of the readout microwaves with the variation in the device temperature. The method proposed in this paper is applicable to other types, such as a hybrid-type MKID.