Source author record

Yoshikazu Ito

Yoshikazu Ito appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Topological effects of three-dimensional porous graphene on Dirac quasiparticles

This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its electrical properties. This 3D architecture is characterized by the intrinsic curvature of smoothly interconcnected graphene sheets without edges, the structures and properties of which can be controlled with its pore sizes. The impact of pore size on the electrical transport properties was investigated through magnetoresistance measurements. We observed that 3D graphene with small pores exhibits transitioning to weak localization with decreasing temperature. The comparison with the theory based on the quantum correction clarified that an increase in the intrinsic curvature significantly induces the intervalley scattering event, which breaks the chirality. This increase in the intervalley scattering rate originates from the unique topological effects of 3D graphene, i.e., the topological defects required to form the high curvature and the resulting chirality mixing. We also discuss the scattering processes due to microscopic chemical bonding states as found by high spatial-resolved X-ray photoemission spectral imaging, to support the validity of our finding.

preprint2016arXiv

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.