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Yongxin Zeng

Yongxin Zeng contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2025arXiv

Superfluid stiffness bounds in time-reversal symmetric superconductors

Quantum geometry has been shown to make an important contribution to the superfluid stiffness of superconductors, especially for flat-band systems such as moiré materials. In this work we use mean-field theory to derive an expression for the superfluid stiffness of time-reversal symmetric superconductors at zero temperature by computing the energy of the mean-field ground state as a function of pairing momentum. We show that the quantum geometric contribution to superfluid stiffness is a consequence of broken Galilean invariance in the interaction Hamiltonian, arising from momentum-dependent form factors related to the momentum dependence of Bloch states. The effects of broken Galilean invariance are not fully parametrized by the quantum metric considered in previous work. We obtain general lower and upper bounds that apply to both continuum and lattice models and present numerical calculations of the precise value in several important cases. The superfluid stiffness of superconductivity in a Landau level saturates the lower bound and the superfluid stiffness of the other cases we consider is close to the general lower bound we derive. In multilayer rhombohedral graphene the geometric contribution is shown not to be the dominant contribution to the superfluid stiffness, despite the flat band behavior in the vicinity of the Fermi level. Finally, assuming contact interaction and uniform pairing, we show that the superfluid stiffness is proportional to the ``minimal quantum metric" introduced in previous work. We provide a continuum version of the minimal quantum metric and explain its physical origin.

preprint2022arXiv

The strong modulation limit of excitons and trions in moiré materials

The optical properties of weakly-doped two-dimensional materials are dominated by strong exciton and trion absorption and luminescence features. In this article we examine the influence of moiré patterns in semiconductor heterobilayers on exciton and trion states in the limit of strong moiré modulation potentials, commenting on similarities and differences compared to the case of excitons and trions in semiconductor quantum dots. We discuss strategies for using optical properties as quantitative probes of moiré materials, and the prospects for exploiting moiré materials to design unique light emitters.

preprint2021arXiv

In-plane magnetic field induced density wave states near quantum spin Hall phase transitions

We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we calculate phase diagrams as functions of the band gap, band hybridization, and magnetic field strength. We show that when the band hybridization is weak, the system is unstable against the formation of density wave states. As the strength of the in-plane magnetic field increases, the density-wave region of the phase diagram expands and distinct density-wave states appear. We discuss possible experimental implications of our results.

preprint2020arXiv

Electrically Controlled Two-Dimensional Electron-Hole Fluids

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of interacting system chemical potentials, we explain the dependence of the electron and hole densities on the two gate voltages. Because chemical potential jumps occur for both electrons and holes at neutrality, there is a finite area in gate voltage parameter space over which electron and hole densities are equal. In that regime the electron-hole pair density depends only on the sum of the two gate voltages. We are able to explain a recent experimental study of electrically controlled bilayers by allowing for interlayer tunneling and using a non-equilibrium steady-state transport picture.