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Yongsheng Chen

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Published work

8 published item(s)

preprint2026arXiv

Physics-informed machine learning for reconstruction of dynamical systems with invariant measure score matching

In this paper, we develop a novel mesh-free framework, termed physics-informed neural networks with invariant measure score matching (PINN-IMSM), for reconstructing dynamical systems from unlabeled point-cloud data that capture the system's invariant measure. The invariant density satisfies the steady-state Fokker-Planck (FP) equation. We reformulate this equation in terms of its score function (the gradient of the log-density), which is estimated directly from data via denoising score matching, thereby bypassing explicit density estimation. This learned score is then embedded into a physics-informed neural network (PINN) to reconstruct the drift velocity field under the resulting score-based FP equation. The mesh-free nature of PINNs allows the framework to scale to higher dimensions, avoiding the curse of dimensionality inherent in mesh-based methods. To address the ill-posedness of high-dimensional inverse problems, we recast the problem as a PDE-constrained optimization that seeks the minimal-energy velocity field. Under suitable conditions, we prove that this problem admits a unique solution that depends continuously on the score function. The constrained formulation is solved using a stochastic augmented Lagrangian method. Numerical experiments on representative dynamical systems, including the Van der Pol oscillator, an active swimmer in an anharmonic trap, and the chaotic Lorenz-63 and Lorenz-96 systems, demonstrate that PINN-IMSM accurately recovers invariant measures and reconstructs faithful dynamical behavior for problems in up to five dimensions.

preprint2020arXiv

Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation

Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared from sequentially deposited donor and acceptor layers (sq-BHJ) have recently been promising to be highly efficient, environmentally friendly, and compatible with large area and roll-to-toll fabrication. However, the related photophysics at donor-acceptor interface and the vertical heterogeneity of donor-acceptor distribution, critical for exciton dissociation and device performance, are largely unexplored. Herein, steady-state and time-resolved optical and electrical techniques are employed to characterize the interfacial trap states. Correlation with the luminescent efficiency of interfacial states and its non-radiative recombination, interfacial trap states are characterized to be about 50% more populated in the sq-BHJ than as-cast BHJ (c-BHJ), which probably limits the device voltage output. Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. From the proposed "needle" model, the high exciton dissociation efficiency is rationalized. Our study highlights the promise of sequential deposition to fabricate efficient solar cells, and points towards improving the voltage output and overall device performance via eliminating interfacial trap states.

preprint2020arXiv

Visualising the Vertical Energetic Landscape in Organic Photovoltaics

Energy level diagrams in organic electronic devices play a crucial role in device performance and interpretation of device physics. In the case of organic solar cells, it has become routine to estimate the photovoltaic gap of the donor:acceptor blend using the energy values measured on the individual blend components, resulting in a poor agreement with the corresponding open-circuit voltage of the device. To address this issue, we developed a method that allows a direct visualisation of the vertical energetic landscape in the blend, obtained by combining ultraviolet photoemission spectroscopy and argon cluster etching. We investigate both model and high-performance photovoltaic systems and demonstrate that the resulting photovoltaic gaps are in close agreement with the measured CT energies and open-circuit voltages. Furthermore, we show that this method allows us to study the evolution of the energetic landscape upon environmental degradation, critically important for understanding degradation mechanisms and development of mitigation strategies.

preprint2015arXiv

Macroscopic and direct light propulsion of bulk graphene material

It has been a great challenge to achieve the direct light manipulation of matter on a bulk scale. In this work, the direct light propulsion of matter was observed on a macroscopic scale for the first time using a bulk graphene based material. The unique structure and properties of graphene and the morphology of the bulk graphene material make it capable of not only absorbing light at various wavelengths but also emitting energetic electrons efficiently enough to drive the bulk material following Newtonian mechanics. Thus, the unique photonic and electronic properties of individual graphene sheets are manifested in the response of the bulk state. These results offer an exciting opportunity to bring about bulk scale light manipulation with the potential to realize long-sought proposals in areas such as the solar sail and space transportation driven directly by sunlight.

preprint2014arXiv

The selective transfer of patterned graphene

Graphene is an emerging class of two-dimensional (2D) material with unique electrical properties and a wide range of potential practical applications. In addition, graphene hybrid structures combined with other 2D materials, metal microstructures, silicon photonic crystal cavities, and waveguides have more extensive applications in van der Waals heterostructures, hybrid graphene plasmonics, hybrid optoelectronic devices, and optical modulators. Based on well-developed transfer methods, graphene grown by chemical vapor deposition (CVD) is currently used in most of the graphene hybrid applications. Although mechanical exfoliation of highly oriented pyrolytic graphite provides the highest-quality graphene, the transfer of the desired microcleaving graphene (MG) to the structure at a specific position is a critical challenge, that limits the combination of MG with other structures. Herein, we report a new technique for the selective transfer of MG patterns and devices onto chosen targets using a bilayer-polymer structure and femtosecond laser microfabrication. This selective transfer technique, which exactly transfers the patterned graphene onto a chosen target, leaving the other flakes on the original substrate, provides an efficient route for the fabrication of MG-based microdevices. This method will facilitate the preparation of van der Waals heterostructures and enable the optimization of the performance of graphene hybrid devices.

preprint2013arXiv

Evolution of photo-excited carrier distribution from anisotropic to isotropic and isotropic photon absorption in graphene

Femtosecond time-resolved spectroscopy using 400 nm-pump and 800 nm-probe in CVD-grown multilayer graphene provides strong evidence for isotropic distribution of photoexcited carrier after initial relaxation. Indicative of such isotropic distribution is a pump polarization independence of differential reflectivity (\DeltaR/R) and transmittance (\DeltaT/T) from pump-probe measurements. Combined with results using 800 nm-pump in [arXiv. 1301.1743v3 (2013)], these pump polarization dependences of time-resolved spectroscopy corroborates the evolution of photo-excited carrier distribution from anisotropic to isotropic with carrier relaxation. And, the absorbance of graphene is identical for in-plane and out-of-plane optical fields. No matter the carrier distribution in momentum space, the influence of carrier on in-plane and out-of-plane optical fields from state filling effect is identical. The sign reversing of ps dynamics signal in graphene/graphite should not directly relate to carrier.

preprint2013arXiv

Experimental observation of polarization-dependent ultrafast carrier dynamics in multi-layer graphene

Polarization characteristic of ultrafast carrier dynamics in multi-layer CVD-grown graphene is probed with tilted beams (with respected to the graphene plane). The graphene ultrafast carrier dynamics measurement greatly depends on both polarization (i.e., orientation of linear polarization) and wave vector of probe beam. The differential reflectivity ΔR=R signal of picosecond dynamics could be continuously altered from positive to negative by changing the probe polarization from P to S when the dynamics is probed by a total internal reflected beam. The polarization dependent ΔR=R signal around 0 delay time is positive. It could be altered to negative by changing the probe polarization if the probe beam is non-total internal reflected beam. However, no sign reversal was observed for differential transmittance ΔT=T . These extremely unexpected results indicate the anisotropy of graphene carrier dynamics. Thus the ultrafast carrier dynamics should be further studied with consideration of the anisotropic structure (in- and out-of-graphene plane) of graphene.

preprint2013arXiv

Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes into Dense, Aligned Rafts

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting single-walled carbon nanotubes are separated from bulk materials and self-assembled into densely aligned rafts driven by depletion attraction forces. Microscopy and spectroscopy revealed a high degree of alignment and a high packing density of ~100 tubes/micron within SWNT rafts. Field-effect transistors made from aligned SWNT rafts afforded short channel (~150 nm long) devices comprised of tens of purely semiconducting SWNTs derived from chemical separation within a < 1 micron channel width, achieving unprecedented high on-currents (up to ~120 microamperes per device) with high on/off ratios. The average on-current was ~ 3-4 microamperes per tube. The results demonstrated densely aligned high quality semiconducting SWNTs for integration into high performance nanoelectronics.