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Yongseong Choi

Yongseong Choi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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Published work

13 published item(s)

preprint2022arXiv

Experimental verification of polar structures in ultrathin BaTiO_{3} layers using resonant x-ray reflectivity

Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventional methods such as electrical measurements and piezoelectric response force microscopy are very limited due to leakage currents and the smallness of the ferroelectric signals. Here, we show that the ferroelectricity of ultrathin SrRuO3/BaTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates can be measured using resonant x-ray reflectivity (RXRR). This experimental technique can provide an element-specific electronic depth profile as well as increased sensitivity to Ti off-center displacements at the Ti K pre-edge. The depth-sensitivity of RXRR selectively detects the strong polarization dependence of the Ti pre-edge features of ultrathin BaTiO3 layers while discriminating the contribution of the SrTiO3 substrate. This technique verified that the BaTiO3 layer can be ferroelectric down to the lowest experimental limit of a critical thickness of 2.5 unit cells. Our results can open a novel way to explore ultrathin ferroelectric-based nano-electronic devices.

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preprint2021arXiv

A magnetic Weyl semimetallic phase in thin films of Eu$_2$Ir$_2$O$_7$

The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, we report on the discovery of the long-sought magnetic Weyl semi-metallic phase in (111)-oriented Eu$_2$Ir$_2$O$_7$ high-quality epitaxial thin films. The topological magnetic state shows an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges below the onset of a peculiar magnetic phase with all-in-all-out antiferromagnetic ordering. The observed anomalous Hall conductivity arises from the non-zero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.

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preprint2021arXiv

Observation of orbital order in the Van der Waals material 1T-TiSe2

Besides magnetic and charge order, regular arrangements of orbital occupation constitute a fundamental order parameter of condensed matter physics. Even though orbital order is difficult to identify directly in experiments, its presence was firmly established in a number of strongly correlated, three-dimensional Mott insulators. Here, reporting resonant X-ray scattering experiments on the layered Van der Waals compound $1T$-TiSe$_2$, we establish the emergence of orbital order in a weakly correlated, quasi-two-dimensional material. Our experimental scattering results are consistent with first-principles calculations that bring to the fore a generic mechanism of close interplay between charge redistribution, lattice displacements, and orbital order. It demonstrates the essential role that orbital degrees of freedom play in TiSe$_2$, and their importance throughout the family of correlated Van der Waals materials.

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preprint2020arXiv

Emergent electric field control of phase transformation in oxide superlattices

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltage-controlled functionality.

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preprint2020arXiv

Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures

The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only small AMR signals have been detected thus far, prompting a search for new mechanisms to enhance the signal. In this study on CaMnO3/CaIrO3 heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signal two orders of magnitude larger than previously observed in similar systems. We find that one order is enhanced by tuning a large biaxial anisotropy through octahedral tilts of similar sense in the constituent layers, while the second order is triggered by a spin-flop transition in a nearly Mott-type phase. Dynamics between these two phenomena as evidenced by the step-like AMR and a superimposed biaxial-anisotropy-induced AMR capture a subtle interplay of pseudospin coupling with the lattice and external magnetic field. Our study shows that a combination of charge-transfer, interlayer coupling, and a spin-flop transition can yield a giant AMR relevant for sensing and antiferromagnetic memory applications.

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preprint2020arXiv

Strain-modulated Slater-Mott crossover of pseudospin-half square-lattice in (SrIrO3)1/ (SrTiO3)1 superlattices

We report on the epitaxial strain-driven electronic and antiferromagnetic modulations of a pseudospin-half square lattice realized in superlattices of (SrIrO3)1/(SrTiO3)1. With increasing compressive strain, we find the low-temperature insulating behavior to be strongly suppressed with a corresponding systematic reduction of both the Neel temperature and the staggered moment. However, despite such a suppression, the system remains weakly insulating above the Neel transition. The emergence of metallicity is observed under large compressive strain but only at temperatures far above the Néel transition. These behaviors are characteristics of the Slater-Mott crossover regime, providing a unique experimental model system of the spin-half Hubbard Hamiltonian with a tunable intermediate coupling strength.

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preprint2019arXiv

Evolution of structure and magnetism across the metal-insulator transition in the pyrochlore iridate $($Nd$_{1-x}$Ca$_x)_2$Ir$_2$O$_7$

We report on the evolution of the thermal metal-insulator transition in polycrystalline samples of Nd$_2$Ir$_2$O$_7$ upon hole-doping via substitution of Ca$^{2+}$ for Nd$^{3+}$. Ca substitution mediates a filling-controlled Mott-like transition with minimal resolvable structural changes and without altering site symmetry. Local structure confirms that Ca substitution does not result in local chemical phase separation, and absorption spectroscopy establishes that Ir cations maintain a spin-orbit entangled electronic configuration. The metal-insulator transition coincides with antiferromagnetic ordering on the Ir sublattice for all measured samples, and both decrease in onset temperature with Ca content. Weak low-temperature upturns in susceptibility and resistivity for samples with high Ca content suggest that Nd sublattice antiferromagnetism continues to couple to carriers in the metallic regime.

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preprint2019arXiv

Photoemission and Dynamical Mean Field Theory Study of Electronic Correlation in a $t_{2g}^{5}$ Metal of SrRhO$_{3}$ Thin Film

Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication (Phys. Rev. B 95, 245121(2017)) on epitaxial SrRhO$_3$ thin films unexpectedly reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We studied this SrRhO$_3$ thin film by hard x-ray photoemission spectroscopy and found a very small density of states (DOS) at Fermi level, which is consistent with the reported bad-metallic behavior. However, this negligible DOS persists up to room temperature, which contradicts with the explanation of antiferromagnetic transition at around 100 K. We also employed electronic structure calculations within the framework of density functional theory and dynamical mean-field theory. In contrast to the experimental results, our calculations indicate metallic behavior of both bulk SrRhO$_3$ and the SrRhO$_3$ thin film. The thin film exhibits stronger correlation effects than the bulk, but the correlation effects are not sufficient to drive a transition to an insulating state. The calculated uniform magnetic susceptibility is substantially larger in the thin film than that in the bulk. The role of SOC was also investigated and only a moderate modulation of the electronic structure was observed. Hence SOC is not expected to play an important role for electronic correlation in SrRhO$_3$.

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preprint2019arXiv

Spontaneous Hall Effect enhanced by local Ir moments in epitaxial Pr$_2$Ir$_2$O$_7$ thin films

Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5K, we observe the effect at elevated temperatures up to 15K in epitaxial thin films on (111) YSZ substrates synthesized via solid phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction (XRD) and x-ray magnetic circular dichroism (XMCD) to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin film Ir local moments to lattice distortions absent in the bulk-like powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials.

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preprint2016arXiv

Atomic-scale control of magnetic anisotropy via novel spin-orbit coupling effect in La2/3Sr1/3MnO3/SrIrO3 superlattices

Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic devices. Conventional manipulation of the intrinsic MA, i.e. magnetocrystalline anisotropy (MCA), typically depends upon crystal symmetry. Extrinsic control over the MA is usually achieved by introducing shape anisotropy or exchange bias from another magnetically ordered material. Here we demonstrate a pathway to manipulate MA of 3d transition metal oxides (TMOs) by digitally inserting non-magnetic 5d TMOs with pronounced spin-orbit coupling (SOC). High quality superlattices comprised of ferromagnetic La2/3Sr1/3MnO3 (LSMO) and paramagnetic SrIrO3 (SIO) are synthesized with the precise control of thickness at atomic scale. Magnetic easy axis reorientation is observed by controlling the dimensionality of SIO, mediated through the emergence of a novel spin-orbit state within the nominally paramagnetic SIO.

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preprint2015arXiv

Competition between heavy-fermion and Kondo interaction in isoelectronic A-site ordered perovskites

With current research efforts shifting towards the 4$d$ and 5$d$ transition metal oxides, understanding the evolution of the electronic and magnetic structure as one moves away from 3$d$ materials is of critical importance. Here we perform X-ray spectroscopy and electronic structure calculations on $A$-site ordered perovskites with Cu in the $A$-site and the $B$-sites descending along the 9th group of the periodic table to elucidate the emerging properties as $d$-orbitals change from partially filled 3$d$, 4$d$, to 5$d$. The results show that when descending from Co to Ir the charge transfers from the cuprate like Zhang-Rice state on Cu to the t$_{2g}$ orbital of the B site. As the Cu $d$-orbital occupation approaches the Cu$^{2+}$ limit, a mixed-valence state in CaCu$_3$Rh$_4$O$_{12}$ and heavy fermion state in CaCu$_3$Ir$_4$O$_{12}$ are obtained. The investigated d-electron compounds are mapped onto the Doniach phase diagram of the competing RKKY and Kondo interactions developed for f-electron systems.

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preprint2015arXiv

Novel electronic behavior driving NdNiO3 metal-insulator transition

We present evidence that the metal-insulator transition (MIT) in a tensile strained NdNiO3 (NNO) film is facilitated by a redistribution of electronic density and neither requires Ni charge disproportionation nor symmetry change [1, 2]. Given epitaxial tensile strain in thin NNO films induces preferential occupancy of the $e_g$ $d_{x^2-y^2}$ orbital ($s_{3z^2-r^2}$) we propose the larger transfer integral of this orbital state with the O 2p mediates a redistribution of electronic density from the Ni atom. A decrease in Ni $d_{x^2-y^2}$ orbital occupation is directly observed by resonant inelastic x-ray scattering below the MIT temperature. Furthermore, an increase in Nd charge occupancy is measured by x-ray absorption at the Nd L3 edge. Both spin-orbit coupling and crystal field effects combine to break the degeneracy of the Nd 5d states shifting the energy of the Nd $e_g$ $d_{x^2-y^2}$ orbital towards the Fermi level allowing the A site to become an active acceptor during the MI transition. This work identifies the relocation of electrons from the Ni 3d to the Nd 5d orbitals across the MIT. We propose the insulating gap opens between the Ni 3d and O 2p resulting from Ni 3d electron localization mediated by charge loss. The transition seems neither purely Mott-Hubbard nor simple charge transfer.

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preprint2014arXiv

Critical phenomena of nano phase evolution in a first order transition

First order phase transitions occur discretely from one state to another, however they often display continuous behavior. To understand this nature, it is essential to probe how the emergent phase nucleates, interacts and evolves with the initial phase across the transition at microscopic scales. Here, the prototypical first-order magneto-structural transition in FeRh is used to investigate these phenomena. We find that the temperature evolution of the final phase exhibits critical behavior. Furthermore, a difference between the structure and magnetic transition temperatures reveals a novel intermediate phase created from the interface between the initial and nucleated final states. This emergent phase, characterized by its lack of spin order due to the competition between the antiferromagnetic and ferromagnetic interactions, leads to suppression of the dynamic aspect of the transition, generating a static mixed-phase-morphology. Understanding and controlling the transition process at this spatial scale is critical to optimizing functional device capabilities.

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